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Author: kin cheung

Displaying records 21 to 30 of 65 records.
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21. When Does a Circuit Really Fail?
Published: 12/15/2011
Authors: Jason T Ryan, Lan Wei, Jason P Campbell, Richard G. Southwick, Kin P Cheung, Tony Oates, Phillip Wong, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911206

22. TaOx Memristive Devices with Ferromagnetic Electrodes
Published: 12/7/2011
Authors: Hyuk-Jae Jang, Pragya Rasmi Shrestha, Oleg A Kirillov, Helmut Baumgart, Kin P Cheung, Oana Jurchescu, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910359

23. On the ,U-ShapedŠ Continuum of Band Edge States at the Si/SiO2 Interface
Published: 12/1/2011
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, Chadwin Young
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911207

24. High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch
Published: 10/8/2011
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Kin P Cheung, Jason P Campbell, Helmut Baumgart, Gary Harris
Abstract: Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909300

25. Circuit-Aware Device Reliability Criteria Methodology
Published: 9/12/2011
Authors: Jason T Ryan, Lan Wei, Jason P Campbell, Richard G. Southwick, Kin P Cheung, Anthony Oates, John S Suehle, Phillip Wong
Abstract: Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908765

26. High Mobility Channel from the Prospective of Random Telegraph Noise
Published: 9/12/2011
Authors: Kin P Cheung, Jason P Campbell
Abstract: We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908755

27. A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices
Published: 8/1/2011
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: Series resistance has become a serious obstacle inhibiting the performance of advanced CMOS devices. However, series resistance quantification in these same advanced CMOS devices is becoming exceedingly difficult. In this study, we demonstrate a very ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905954

28. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

29. A Physics-Based Simple Series Resistance Extraction Methodology
Published: 6/1/2011
Authors: Kin P Cheung, Jason P Campbell
Abstract: Series resistance has become a serious obstacle encountered in the development of advanced CMOS devices. At the same time, series resistance quantification in these same advanced CMOS devices is a difficult challenge. In this study, we demonstrate a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908460

30. On The Magnitude of Random Telegraph Noise in Ultra-Scaled MOSFETs
Published: 5/2/2011
Authors: Kin P Cheung, Jason P Campbell
Abstract: Random telegraph noise (RTN) has been shown to be a more severe scaling issue than the Random Dopant Effect (RDE). However this observation relies heavily on studies which focus only on threshold voltage (VTH) fluctuations. VTH measurements make sepa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908458



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