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1. 193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology
Published: 8/24/2009
Authors: Martin Y Sohn, Richard Quintanilha, Bryan M Barnes, Richard M Silver
Abstract: An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and ...

2. 3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization
Published: 3/25/2013
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Ronald G Dixson, Richard M Silver
Abstract: Reduced target dimensions requiring improved resolution and sensitivity have driven the need to use and analyze the phase and scattered frequency information available when using image-based scatterometry systems. One such system is scatterfield micr ...

3. 3-D Optical Metrology of Finite sub-20nm Dense Arrays With sub-nanometer Parametric Uncertainties
Published: 6/23/2013
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Ronald G Dixson, Richard M Silver
Abstract: A new approach that involves parametric fitting of 3-D scattered field with electromagnetic simulation, Fourier domain normalization, and uncertainties analysis is presented to rigorously analyze 3-D through-focus optical images of targets that scatt ...

4. A Bayesian Statistical Model for Hybrid Metrology to Improve Measurement Accuracy
Published: 7/31/2011
Authors: Richard M Silver, Nien F Zhang, Bryan M Barnes, Jing Qin, Hui Zhou, Ronald G Dixson
Abstract: We present a method to combine measurements from different techniques that reduces uncertainties and can improve measurement throughput. The approach directly integrates the measurement analysis of multiple techniques that can include different conf ...

5. Angle-resolved Optical Metrology using Multi-Technique Nested Uncertainties
Published: 8/15/2009
Authors: Richard M Silver, Bryan M Barnes, Hui Zhou, Nien F Zhang, Ronald G Dixson
Abstract: This paper introduces recent advances in scatterfield microscopy using improved normalization and fitting procedures. Reduced measurement uncertainties are obtained through the use of more accurate normalization procedures in combination with better ...

6. Characterizing a Scatterfield Optical Platform for Semiconductor Metrology
Published: 12/21/2010
Authors: Bryan M Barnes, Ravikiran Attota, Richard Quintanilha, Martin Y Sohn, Richard M Silver
Abstract: Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translat ...

7. Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization
Published: 11/5/2015
Authors: Jing Qin, Richard M Silver, Bryan M Barnes, Hui Zhou, Ronald G Dixson, Mark Alexander Henn
Abstract: Quantitative optical measurements of deep sub-wavelength, three-dimensional, nanometric structures with sensitivity to sub-nanometer details address an ubiquitous measurement challenge. A Fourier domain normalization approach is used in the Fourier ...

8. Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection
Published: 2/11/2015
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Andras Vladar, Richard M Silver
Abstract: Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, ...

9. Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets
Published: 4/4/2016
Authors: Bryan M Barnes, Mark Alexander Henn, Martin Y Sohn, Hui Zhou, Richard M Silver
Abstract: Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrolo ...

10. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...

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  • SP 250-XX: Calibration Services
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