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1. Quantitative tool characterization of a 193 nm scatterfield microscope
Published: 9/9/2015
Authors: Martin Y Sohn, Bryan M Barnes, Hui Zhou, Richard M Silver
Abstract: Optical microscope tool characterization has been investigated for the quantitative measurements of deep sub-wavelength features using a Fourier plane normalization method. The NIST 193 nm scatterfield microscope operating with an ArF Excimer laser, ...

2. Use of Bayesian Statistics to Improve Optical Measurement Uncertainty by Combined Multi-Tool Metrology
Published: 6/25/2015
Authors: Nien F Zhang, Richard M Silver, Hui Zhou, Bryan M Barnes
Abstract: Recently, there has been significant research investigating new optical technologies for dimensional metrology of features 32 nm in critical dimension and smaller. When modeling optical measurements a library of curves is assembled through the simula ...

3. The effect of systematic errors on the hybridization of optical critical dimension measurements
Published: 6/21/2015
Authors: Mark Alexander Henn, Richard M Silver, Nien F Zhang, Hui Zhou, Bryan M Barnes
Abstract: In hybrid metrology two or more measurements of the same measurand are combined to provide a more reliable result that ideally incorporates the individual strengths of each of the measurement methods. While these multiple measurements may come from d ...

4. Scatterfield Microscopy and the Fundamental Limits of Optical Defect Metrology
Published: 4/14/2015
Authors: Richard M Silver, Bryan M Barnes, Martin Y Sohn, Hui Zhou
Abstract: Defect inspection remains a critical manufacturing challenge due to the competing requirements between throughput and very high resolution. Currently only optical methods provide an acceptable solution, although there are a number of process layers ...

5. Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression
Published: 3/19/2015
Authors: Mark Alexander Henn, Richard M Silver, Nien F Zhang, Hui Zhou, Bryan M Barnes, Bin Ming, Andras Vladar, John S Villarrubia
Abstract: Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimat ...

6. Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection
Published: 2/11/2015
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Andras Vladar, Richard M Silver
Abstract: Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, ...

7. Optimizing Hybrid Metrology through a Consistent Multi-Tool Parameter Set and Uncertainty Model
Published: 4/14/2014
Authors: Richard M Silver, Bryan M Barnes, Nien F Zhang, Hui Zhou, Andras Vladar, John S Villarrubia, Regis J Kline, Daniel Franklin Sunday, Alok Vaid
Abstract: There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing measurement throughput (speed) through rigorous combinations of two or more different measurement techniques into a ...

8. Optical volumetric inspection of sub-20 nm patterned defects with wafer noise
Published: 4/2/2014
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Richard M Silver, Andras Vladar, Abraham Arceo
Abstract: We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D ...

9. Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy
Published: 10/25/2013
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M Silver, Abraham Arceo
Abstract: Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-reso ...

10. Quantitative microscope characterization for parametric measurements with sub-nm parametric uncertainties
Published: 9/23/2013
Authors: Bryan M Barnes, Jing Qin, Hui Zhou, Richard M Silver
Abstract: Recently, a new technique called Fourier normalization has enabled the parametric fitting of optical images with multiple or even a continuum of spatial frequencies. Integral to the performance of this methodology is the characterization of the high ...

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