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Author: ravikiran attota
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Displaying records 1 to 10 of 38 records.
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1. Calibrated Overlay Wafer Standard
Series: Special Publication (NIST SP)
Report Number: 260-165
Published: 1/1/2007
Authors: Michael T. Stocker, Richard M Silver, Ravikiran Attota, Jay Shi Jun
Abstract: This document describes the physical characteristics of Standard Reference Material SRM 5000, provides guidance for its use in calibrating overlay (OL) tools, and gives information and precautions concerning its care and handling.Standard Reference M ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823210

2. Calibration Strategies for Overlay and Registration Metrology
Published: 5/1/2003
Authors: Richard M Silver, Michael T. Stocker, Ravikiran Attota, M R Bishop, Jay Shi Jun, Egon Marx, M P Davidson, Robert D. Larrabee
Abstract: Critical dimensions in current and next generation devices are driving the need for tighter overlay registration tolerances and improved overlay metrology tool accuracy and repeatability. Tool matching, performance evaluation, model-based metrology, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821977

3. Characterizing a Scatterfield Optical Platform for Semiconductor Metrology
Published: 12/21/2010
Authors: Bryan M Barnes, Ravikiran Attota, Richard Quintanilha, Martin Y Sohn, Richard M Silver
Abstract: Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translat ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905931

4. Comparison of Measured Optical Image Profiles of Silicon Lines with Two Different Theoretical Models
Published: 7/1/2002
Authors: Richard M Silver, Ravikiran Attota, Michael T. Stocker, Jay Shi Jun, Egon Marx, Robert D. Larrabee, B Russo, M P Davidson
Abstract: In this paper we describe a new method for the separation of too-induced measurement errors and sample-induced measurement errors. We apply the method to standard overlay target configurations. This method is used to separate the effects of the tool ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821754

5. Controlling Formation of Atomic Step Morphology on Micro-patterned Si (100)
Published: 8/9/2011
Authors: Kai Li, Pradeep Narayanan Namboodiri, Sumanth B. Chikkamaranahalli, Gheorghe Stan, Ravikiran Attota, Joseph Fu, Richard M Silver
Abstract: Micro scale features are fabricated on Si (100) surfaces using lithographic techniques and then thermally processed in an ultra high vacuum (UHV) environment. Samples are flash heated at 1200 °C and further annealed at 1050 °C for 18 hours. The surf ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907301

6. Critical dimension metrology by through-focus scanning optical microscopy beyond the 22 nm node
Published: 6/7/2013
Authors: Ravikiran Attota, Benjamin D. Bunday, Victor Vertanian
Abstract: We present results using simulations and experiments to demonstrate metrological applications of the through-focus scanning optical microscopy (TSOM) down to features at and well below the International Technology Roadmap for Semiconductors' 22  ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913353

7. Dimensional Analysis of Through Silicon Vias Using the TSOM Method
Published: 7/12/2011
Authors: Ravikiran Attota, Andrew Rudack
Abstract: There is a great need for accurate, truly-3D metrology solutions that can be used for analysis of high aspect ratio features such as through-silicon-vias (TSVs). Through-focus scanning optical microscopy (TSOM) is an optical metrology method that pr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909226

8. Evaluation of New In-Chip and Arrayed Line Overlay
Published: 5/1/2004
Authors: Ravikiran Attota, Richard M Silver, M R Bishop, Egon Marx, Jay Shi Jun, Michael T. Stocker, M P Davidson, Robert D. Larrabee
Abstract: Two types of overlay targets have been designed and evaluated for the study of optical overlay metrology. They are in-chip and arrayed overlay targets. In-chip targets are three-bar two-level targets designed to be placed in or near the active device ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822386

9. Evaluation of New In-Chip and Arrayed Line Overlay Target Designs
Published: 5/24/2004
Authors: M P Davidson, M R Bishop, Robert D. Larrabee, Michael T. Stocker, Jay Shi Jun, Egon Marx, Richard M Silver, Ravikiran Attota
Abstract: Two types of overlay targets have been designed and evaluated for the study of optical overlay metrology. They are in-chip and arrayed overlay targets. In-chip targets are three-bar two-level targets designed to be placed in or near the active device ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822156

10. Extending the Limits of Image-Based Optical Metrology
Published: 6/20/2007
Authors: Richard M Silver, Bryan M Barnes, Ravikiran Attota, Jay Shi Jun, Michael T. Stocker, Egon Marx, Heather J Patrick
Abstract: We have developed a set of techniques, referred to as scatterfield microscopy, in which the illumination is engineered in combination with appropriately designed metrology targets. Previously we reported results from samples with sub-50 nm sized fea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823218



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Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series