The CMOS Device and Reliability Project will develop advanced metrology tools to enable high performance CMOS (Complementary Metal Oxide Semiconductor) devices with sufficient reliability.
This project develops metrology tools to characterize advanced transistors to understand the physics governing their performance and degradation. We deal with current problems as well as expected problems in the future. By working closely with semiconductor manufacturers, we deliver solutions that are important and timely.
Electron devices and their reliability have long been important topics of research at NIST. Over the years, we have always played a central role in this important field. Many of the commonly used test structures and test methodologies in the industry were developed at NIST. NIST also led many of the standard setting efforts.
CMOS technology has advanced at a steady, but rapid pace for many decades. It is now a global business with over $300 billion in annual sales. The larger electronics industry that leverages the CMOS technology has annual sales of multi-trillion dollars. Everything electronics, as we all have come to expect, get cheaper and better every year - a benefit of the relentless advance in CMOS technology.
The CMOS transistors currently in production are as small as 20 nm, and those in advanced development are smaller than 10 nm. Properly characterizing these devices and understanding factors that affect their performance and reliability are extremely challenging. Our work focus is on meeting these measurement challenges by pushing the known measurement technologies to the limit and developing new measurement capabilities. By emphasizing fundamental understanding of the measured phenomenon, we amplify our impact to the industry.
High-speed, amplified probe tip used to collect reliability data in the NIST Advanced Device Characterization and Reliability laboratory.
Lead Organizational Unit:pml
Kin (Charles) P. Cheung, Leader
100 Bureau Drive, M/S 8120