Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Characterization of InGaN quantum disks in GaN nanowires

NIST Authors in Bold

Author(s): Alexana Roshko; Roy H. Geiss; John B. Schlager; Matthew D. Brubaker; Kristine A. Bertness; Norman A. Sanford; Todd E. Harvey;
Title: Characterization of InGaN quantum disks in GaN nanowires
Published: March 04, 2014
Abstract: Catalyst-free GaN nanowires with InGaN quantum disks (QDs) were characterized by scanning/transmission elec-tron microscopy (S/TEM) and photoluminescence. A va-riety of structures, from QDs with large strain fields to apparently strain free QDs were observed. TEM lattice imaging revealed dislocations in the QD regions of the samples. Stacking faults were also observed and appear to be associated with the GaN growth temperature rather than the presence of indium. Energy dispersive X-ray spectroscopy in the TEM revealed indium concentrated in stacking faults but not always localized in the QD regions. Photoluminescence spectra show a red-shift, possibly associated with indium concentration
Citation: Physica Status Solidi A-Applications and Materials Science
Volume: 11
Issue: 3-4
Pages: pp. 505 - 508
Keywords: gallium nitride, nanowires, transmission electron microscopy, photoluminescence
Research Areas: Nanomaterials
DOI: http://dx.doi.org/DOI.101002/pssc201300639  (Note: May link to a non-U.S. Government webpage)