| Author(s): |
Gregg M. Gallatin; Patrick Naulleau; Robert Brainard; |
| Title: |
Modeling the effects of acid amplifiers on photoresist stochastics |
| Published: |
March 23, 2012 |
| Abstract: |
The tradeoff between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeoff, continues to be a difficult challenge, especially for EUV lithography. Acid amplifiers have recently been proposed as a method to improve upon the overall RLS performance of EUV resists. Here we discuss a simulation approach to study the issue. The model extends the standard reaction diffusion equation to explicitly capture the stochastic behavior of exposure, photo-acid generation and acid amplification. Using this model the impact acid amplifiers have on the RLS tradeoff is studied under a variety of resist conditions. |
| Conference: |
Materials and Processes for Advanced Lithography and Nanotechnology |
| Proceedings: |
Proceedings of SPIE |
| Volume: |
8322 |
| Location: |
San Jose, CA |
| Dates: |
February 13-17, 2012 |
| Keywords: |
Lithography; Photoresist; Line Edge Roughness; Acid Amplfiers |
| Research Areas: |
Nanofabrication, Nanomanufacturing, and Nanoprocessing, Nanotechnology |
| PDF version: |
 Click here to retrieve PDF version of paper (408KB) |
