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|Author(s):||Gregg M. Gallatin; Patrick Naulleau; Robert Brainard;|
|Title:||Modeling the effects of acid amplifiers on photoresist stochastics|
|Published:||March 23, 2012|
|Abstract:||The tradeoff between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeoff, continues to be a difficult challenge, especially for EUV lithography. Acid amplifiers have recently been proposed as a method to improve upon the overall RLS performance of EUV resists. Here we discuss a simulation approach to study the issue. The model extends the standard reaction diffusion equation to explicitly capture the stochastic behavior of exposure, photo-acid generation and acid amplification. Using this model the impact acid amplifiers have on the RLS tradeoff is studied under a variety of resist conditions.|
|Conference:||Materials and Processes for Advanced Lithography and Nanotechnology|
|Proceedings:||Proceedings of SPIE|
|Location:||San Jose, CA|
|Dates:||February 13-17, 2012|
|Keywords:||Lithography, Photoresist, Line Edge Roughness, Acid Amplfiers|
|Research Areas:||Nanofabrication, Nanomanufacturing, and Nanoprocessing, Nanotechnology|
|PDF version:||Click here to retrieve PDF version of paper (418KB)|