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Publication Citation: Modeling the effects of acid amplifiers on photoresist stochastics

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Author(s): Gregg M. Gallatin; Patrick Naulleau; Robert Brainard;
Title: Modeling the effects of acid amplifiers on photoresist stochastics
Published: March 23, 2012
Abstract: The tradeoff between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeoff, continues to be a difficult challenge, especially for EUV lithography. Acid amplifiers have recently been proposed as a method to improve upon the overall RLS performance of EUV resists. Here we discuss a simulation approach to study the issue. The model extends the standard reaction diffusion equation to explicitly capture the stochastic behavior of exposure, photo-acid generation and acid amplification. Using this model the impact acid amplifiers have on the RLS tradeoff is studied under a variety of resist conditions.
Conference: Materials and Processes for Advanced Lithography and Nanotechnology
Proceedings: Proceedings of SPIE
Volume: 8322
Location: San Jose, CA
Dates: February 13-17, 2012
Keywords: Lithography, Photoresist, Line Edge Roughness, Acid Amplfiers
Research Areas: Nanotechnology, Nanofabrication, Nanomanufacturing, and Nanoprocessing
PDF version: PDF Document Click here to retrieve PDF version of paper (418KB)