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|Author(s):||Randolph E. Elmquist; Mariano A. Real; Irene G. Calizo; Brian G. Bush; Tian T. Shen; Nikolai N. Klimov; David B. Newell; Angela R. Hight Walker; Randall M. Feenstra;|
|Title:||Characteristics of Graphene for Quantized Hall Effect Measurements|
|Published:||June 01, 2012|
|Abstract:||This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene produced by three common processing methods and discuss the conditions necessary for well-developed resistance plateaus to be observed. Methods used to determine the graphene layer thickness are presented. These metrologically relevant characteristics of graphene are correlated with electrical transport measurements in strong magnetic fields.|
|Conference:||Conference on Precision Electromagnetic Measurements 2012|
|Proceedings:||CPEM 2012 Conference Digest|
|Pages:||pp. 514 - 515|
|Dates:||July 2-6, 2012|
|Keywords:||Electrical resistance measurements, graphene, material properties, measurement standards, quantum Hall effect|
|Research Areas:||Electron Physics|
|PDF version:||Click here to retrieve PDF version of paper (219KB)|