| Author(s): |
Hyuk-Jae Jang; Oleg A. Kirillov; Oana Jurchescu; Curt A. Richter; |
| Title: |
Spin transport in memristive devices |
| Published: |
January 26, 2012 |
| Abstract: |
We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavior having a typical OFF/ON resistance ratio of 105. Magneto-resistance measurements performed by sweeping an external magnetic field clearly indicate spin transport through an electrochemically formed copper nano-filament as long as 16 nm in the memristive ON-state at 77K. Spin transport vanishes in the OFF-state. These data are strong evidence that the fundamental switching mechanism in these metal-oxide devices is the formation of continuous metallic conduction paths. We expect our findings could advance current electronic technology combining spintronic and electronic functionalities. |
| Citation: |
Applied Physics Letters |
| Volume: |
100 |
| Pages: |
4 pp. |
| Keywords: |
nanoelectronics; spintronics; memristive; memristor, random access memory; magneto-resistance |
| Research Areas: |
Spintronics, Nanoelectronics and Nanoscale Electronics |
