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Publication Citation: Spin transport in memristive devices

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Author(s): Hyuk-Jae Jang; Oleg A. Kirillov; Oana Jurchescu; Curt A. Richter;
Title: Spin transport in memristive devices
Published: January 26, 2012
Abstract: We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavior having a typical OFF/ON resistance ratio of 105. Magneto-resistance measurements performed by sweeping an external magnetic field clearly indicate spin transport through an electrochemically formed copper nano-filament as long as 16 nm in the memristive ON-state at 77K. Spin transport vanishes in the OFF-state. These data are strong evidence that the fundamental switching mechanism in these metal-oxide devices is the formation of continuous metallic conduction paths. We expect our findings could advance current electronic technology combining spintronic and electronic functionalities.
Citation: Applied Physics Letters
Volume: 100
Pages: 4 pp.
Keywords: nanoelectronics; spintronics; memristive; memristor, random access memory; magneto-resistance
Research Areas: Spintronics, Nanoelectronics and Nanoscale Electronics