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|Author(s):||Hyuk-Jae Jang; Oleg A. Kirillov; Oana Jurchescu; Curt A. Richter;|
|Title:||Spin transport in memristive devices|
|Published:||January 26, 2012|
|Abstract:||We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavior having a typical OFF/ON resistance ratio of 105. Magneto-resistance measurements performed by sweeping an external magnetic field clearly indicate spin transport through an electrochemically formed copper nano-filament as long as 16 nm in the memristive ON-state at 77K. Spin transport vanishes in the OFF-state. These data are strong evidence that the fundamental switching mechanism in these metal-oxide devices is the formation of continuous metallic conduction paths. We expect our findings could advance current electronic technology combining spintronic and electronic functionalities.|
|Citation:||Applied Physics Letters|
|Keywords:||nanoelectronics, spintronics, memristive, memristor, random access memory, magneto-resistance|
|Research Areas:||Spintronics, Nanoelectronics and Nanoscale Electronics|