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|Author(s):||Myung Gyu Kang; Henri J. Lezec; Fred Sharifi;|
|Title:||Stable Field Emission from Nanoporous Silicon Carbide|
|Published:||February 15, 2013|
|Abstract:||A new method for fabrication of high current density field emitters based on nanoporous silicon carbide is presented. The emitters are monolithic structures which do not require high temperature gas phase synthesis and the process is compatible with standard microfabrication techniques. Stable emission in excess of 6 A/cm2 at 7.5 V/m is demonstrated. The technique may potentially enable non-thermionic electron sources for applications ranging from microwave electronics to displays.|
|Keywords:||Field Emission, Nanoporous Silicon Carbide, Electrochemical Etching, Focused Ion Beam|
|DOI:||http://dx.doi.org/10.1088/0957-4484/24/6/065201 (Note: May link to a non-U.S. Government webpage)|
|PDF version:||Click here to retrieve PDF version of paper (747KB)|