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Publication Citation: Wafer-level Hall Measurement on SiC MOSFET

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Author(s): Liangchun (. Yu; Kin P. Cheung; Vinayak Tilak; Greg Dunne; Kevin Matocha; Jason P. Campbell; John S. Suehle; Kuang Sheng;
Title: Wafer-level Hall Measurement on SiC MOSFET
Published: October 16, 2009
Abstract: Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate the inversion charge for devices that have high level of defects. Mobility measured by the Hall effect is more accurate; however the conventional Hall mobility measurement is tedious. In this work, we demonstrate a wafer-level Hall measurement technique, which is simple and convenient to implement. With this method, extensive study of the mobility degradation is possible.
Pages: 30 pp.
Keywords: MOSFET, channel mobility, Hall mobility
Research Areas: Semiconductors
PDF version: PDF Document Click here to retrieve PDF version of paper (353KB)