Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Enhanced carrier transport along edges of graphene devices

NIST Authors in Bold

Author(s): Jungseok Chae; Suyong S. Jung; Sungjong Woo; Hongwoo Baek; Jeonghoon Ha; Young J. Song; Young-Woo Son; Nikolai B. Zhitenev; Joseph A. Stroscio; Young Kuk;
Title: Enhanced carrier transport along edges of graphene devices
Published: March 20, 2012
Abstract: The relation between the macroscopic charge transport properties and the microscopic carrier distribution inside conducting channels is one of the central issues in physics and future applications of graphene devices (GDs). With scanning gate microscopy (SGM) ‹ a powerful experimental tool to probe the transport properties of a device through local gating, we find strong local charge accumulation at the edges of a GD. At high carrier densities, SGM signals are an order of magnitude larger at the edges of GDs than inside the bulk channel. We developed a theoretical model relating the conductance enhancement observed at the edges of GDs to the opening of an additional conduction channel. The channel is induced by the band bending of graphene edge states caused and controlled by the edge-charge accumulation and the local tip-gating effect.
Citation: Nano Letters
Volume: 12
Issue: 4
Pages: pp. 1839 - 1844
Keywords: graphene,scanning gate microscopy, atomic force microscopy
Research Areas: Nanoelectronics and Nanoscale Electronics
PDF version: PDF Document Click here to retrieve PDF version of paper (900KB)