Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||Jungseok Chae; Suyong S. Jung; Sungjong Woo; Hongwoo Baek; Jeonghoon Ha; Young J. Song; Young-Woo Son; Nikolai B. Zhitenev; Joseph A. Stroscio; Young Kuk;|
|Title:||Enhanced carrier transport along edges of graphene devices|
|Published:||March 20, 2012|
|Abstract:||The relation between the macroscopic charge transport properties and the microscopic carrier distribution inside conducting channels is one of the central issues in physics and future applications of graphene devices (GDs). With scanning gate microscopy (SGM) ‹ a powerful experimental tool to probe the transport properties of a device through local gating, we find strong local charge accumulation at the edges of a GD. At high carrier densities, SGM signals are an order of magnitude larger at the edges of GDs than inside the bulk channel. We developed a theoretical model relating the conductance enhancement observed at the edges of GDs to the opening of an additional conduction channel. The channel is induced by the band bending of graphene edge states caused and controlled by the edge-charge accumulation and the local tip-gating effect.|
|Pages:||pp. 1839 - 1844|
|Keywords:||graphene,scanning gate microscopy, atomic force microscopy|
|Research Areas:||Nanoelectronics and Nanoscale Electronics|
|PDF version:||Click here to retrieve PDF version of paper (900KB)|