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Publication Citation: Catalyst-free GaN nanowire growth and optoelectronic characterization

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Author(s): Kristine A. Bertness; Norman A. Sanford; John B. Schlager;
Title: Catalyst-free GaN nanowire growth and optoelectronic characterization
Published: August 19, 2011
Abstract: We discuss the present state-of-the-art concerning the growth mechanism, optical luminescence and electrical properties for GaN nanowires grown with catalyst-free molecular beam epitaxy. These nanowires are essentially defect-free and display long photoluminescence lifetimes and carrier mobilities relative to epitaxially grown GaN films. The exclusion of crystalline defects comes from the ease with which strain-relieving dislocations can reach the sidewalls and terminate. The growth mechanism is based on variations in Ga sticking coefficients and surface energies of the sidewall planes and end facet planes. With control of the nucleation process through selective epitaxy on patterned substrates, a high degree of diameter, length and position control can be achieved. Common difficulties with interpretation of optical and electrical data with regard to internal quantum efficiency and mobility are also addressed.
Proceedings: SPIE NanoScience and Engineering, San Diego, CA United States
Volume: 7768
Pages: pp. 776802-1 - 776802-9
Location: San Diego, CA
Dates: August 1-5, 2010
Keywords: GaN nanowires, growth mechanism, molecular beam epitaxy, photoluminescence
Research Areas: Optoelectronics
PDF version: PDF Document Click here to retrieve PDF version of paper (7MB)