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|Author(s):||Brad Conrad; Calvin Chan; Marsha A. Loth; Sean R. Parkin; Xinran Zhang; John E. Anthony; David J. Gundlach;|
|Title:||Characterization of a Soluble Anthradithiophene Derivative|
|Published:||October 01, 2010|
|Abstract:||The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to readily form single crystals with a maximum observed saturation mobility µS of 0.07cm2/Vs, current on-off ratios Ion/Ioff >107, and subthreshold slopes S ~1dec/V. A previously unreported novel columnar stacking crystal structure, with a π/4 radian rotational offset between neighboring molecules, is observed in TBDMS crystals. Electronic current noise in the single crystal TBDMS-TFTs is found to vary inversely with gate voltage, suggesting a mobility fluctuation generation mechanism.|
|Citation:||Applied Physics Letters|
|Pages:||pp. 133306-1 - 133306-3|
|Keywords:||device, single crystal, organic, transistor, noise, TFT, AFM|
|Research Areas:||Semiconductors, Characterization, Semiconductor Materials, Atomic force microscopy (AFM), Academic, Physics, Characterization, Nanometrology, and Nanoscale Measurements, Device Design and Characterization|
|PDF version:||Click here to retrieve PDF version of paper (380KB)|