| Author(s): |
Brad Conrad; Calvin Chan; Marsha A. Loth; Sean R. Parkin; Xinran Zhang; John E. Anthony; David J. Gundlach; |
| Title: |
Characterization of a Soluble Anthradithiophene Derivative |
| Published: |
October 01, 2010 |
| Abstract: |
The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to readily form single crystals with a maximum observed saturation mobility µS of 0.07cm2/Vs, current on-off ratios Ion/Ioff >107, and subthreshold slopes S ~1dec/V. A previously unreported novel columnar stacking crystal structure, with a π/4 radian rotational offset between neighboring molecules, is observed in TBDMS crystals. Electronic current noise in the single crystal TBDMS-TFTs is found to vary inversely with gate voltage, suggesting a mobility fluctuation generation mechanism. |
| Citation: |
Applied Physics Letters |
| Volume: |
97 |
| Pages: |
pp. 133306-1 - 133306-3 |
| Keywords: |
device; single crystal; organic; transistor; noise; TFT; AFM |
| Research Areas: |
Semiconductors, Characterization, Semiconductor Materials, Atomic force microscopy (AFM), Academic, Physics, Characterization, Nanometrology, and Nanoscale Measurements, Device Design and Characterization |
| PDF version: |
 Click here to retrieve PDF version of paper (371KB) |
