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Publication Citation: Characterization of a Soluble Anthradithiophene Derivative

NIST Authors in Bold

Author(s): Brad Conrad; Calvin Chan; Marsha A. Loth; Sean R. Parkin; Xinran Zhang; John E. Anthony; David J. Gundlach;
Title: Characterization of a Soluble Anthradithiophene Derivative
Published: October 01, 2010
Abstract: The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to readily form single crystals with a maximum observed saturation mobility µS of 0.07cm2/Vs, current on-off ratios Ion/Ioff >107, and subthreshold slopes S ~1dec/V. A previously unreported novel columnar stacking crystal structure, with a π/4 radian rotational offset between neighboring molecules, is observed in TBDMS crystals. Electronic current noise in the single crystal TBDMS-TFTs is found to vary inversely with gate voltage, suggesting a mobility fluctuation generation mechanism.
Citation: Applied Physics Letters
Volume: 97
Pages: pp. 133306-1 - 133306-3
Keywords: device, single crystal, organic, transistor, noise, TFT, AFM
Research Areas: Semiconductors, Characterization, Semiconductor Materials, Atomic force microscopy (AFM), Academic, Physics, Characterization, Nanometrology, and Nanoscale Measurements, Device Design and Characterization
PDF version: PDF Document Click here to retrieve PDF version of paper (380KB)