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|Author(s):||Herbert S. Bennett; John J. Pekarik; Margaret Huang;|
|Title:||2009 ITRS Chapter: Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications|
|Published:||January 04, 2010|
|Abstract:||RF and AMS technologies are essential and critical technologies for the rapidly growing wireless communications market. (A list of acronyms is at the end of this paper.) These technologies depend on many materials systems, some of which are compatible with CMOS processing, such as SiGe and others of which may not be compatible with CMOS processing such as those compound semiconductors composed of elements from group III and V in the periodic table. Compound semiconductors become more significant as today s emerging research devices, especially those devices based on the More than Moore (MtM) technologies described in the 2009 ITRS, are deployed in the marketplace. The 2009 RF and AMS Chapter presents the challenges, technology requirements, and potential solutions for the basic technology elements (active and passive devices) used in wireless communication front-end circuits and maintains its applications driven perspective for RF transceiver functions shown schematically in Figure 1. The Chapter has seven main sections. The five Sections on AMS CMOS, RF and AMS Bipolar Devices, On- and Off-Chip Passives, PAs, and MEMS cover primarily 0.4 GHz to 10 GHz application. The sixth Section is on mm-wave technologies and covers 10 GHz to 100 GHz applications. The seventh Section is a new Section on "More than Moore- Heterogeneous Integration of Silicon and III-V Compound Semiconductors" that includes discussions on performance and costs.|
|Citation:||Future Fab International|
|Pages:||pp. 19 - 26|
|Keywords:||bipolar devices, wireless communications, millimeter wave devices, embedded devices, and passive active devices, more than Moore, and heterogeneous integration|