Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Characterization of the Latent Image to Developed Image in Model EUV Photoresists

NIST Authors in Bold

Author(s): John T. Woodward IV; Kwang-Woo Choi; Vivek M. Prabhu; Shuhui Kang; Kristopher Lavery; Wen-Li Wu; Michael Leeson; Anuja De Silva; Nelson Felix; Christopher K. Ober;
Title: Characterization of the Latent Image to Developed Image in Model EUV Photoresists
Published: February 22, 2008
Abstract: Current extreme ultraviolet (EUV) photoresist materials do not yet meet exposure-dose sensitivity, line-width roughness, and resolution requirements. In order to quantify how trade-offs are related to the materials properties of the resist and processing conditions, advanced measurements and fundamental studies are required that consider EUV-resist specific problems. In this paper, we focus on the correlations between the latent image and developed image in EUV exposed line/space features. The latent image of isolated lines produced by EUV lithography are characterized by atomic force microscopy through the change in topology caused by change in film thickness that occurs upon deprotection. The resulting latent-image deprotection gradient, based on line cross-sections, and latent-image line-width roughness provide metrics and insight into ways to optimize the lithographic process. The results from a model polymer and molecular resist show the general applicability of the metric before development.
Conference: SPIE Advanced Lithography
Proceedings: Proceedings of SPIE
Volume: 6923
Pages: 12 pp.
Location: San Jose, CA
Dates: February 22-27, 2008
Keywords: chemically amplified photoresists,molecular glass,photolithography,spin diffusion
Research Areas: Polymers
PDF version: PDF Document Click here to retrieve PDF version of paper (271KB)