| Author(s): |
Martin L. Green; Kao-Shuo Chang; Ichiro Takeuchi; T Chikyow; |
| Title: |
A Combinatorial Study of Metal Gate/HfO2-MOSCAPS |
| Published: |
Date Unknown |
| Abstract: |
Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (?Vfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that over 90% 1% of Ni and Ti, and 75% 1% of Pt were attained in the library. A more negative ?Vfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller Fm near Ni- and Pt-rich corners. In addition, measured JL values are consistent with the observed ?Vfb variations. |
| Citation: |
ECS Transactions |
| Keywords: |
advanced gate stack;combinatorial materials science;metal gate electrodes;sputtering |
| Research Areas: |
Characterization, Ceramics |
