| Author(s): |
F S. Aguirre-Tostado; A Herrera-Gomez; Joseph C. Woicik; R Droopad; Z Yu; D G. Schlom; E Karapetrova; P Zschack; |
| Title: |
Displacive Phase Transition in SrTiO3 Thin Films Grown on Si(001) |
| Published: |
Date Unknown |
| Abstract: |
Polarization dependent x-ray absorption fine structure measurements performed at the Ti K edge together with x-ray diffraction have been used to study the local structure in SrTiO3 thin films grown epitaxially on Si(001). SrTiO3 layers on Si(001) are found to be unstrained for a thickness of approximately 80 A, a splitting of the Ti-O distance perpendicular to the interface is observed: rTiO = 1.87 +/- 0.02 and rTiO = 2.09 +/- 0.06 , whereas only a single Ti-O distance is observed within the plane of the interface: rTiO = 1.95 +/- 0.01 . These findings indicate a tetragonal plus displacive ferroelectric distortion of the cubic SrTiO3 unit cell in response to the compressive strain imposed on the SrTiO3 layer by the Si substrate. Modification of the Ti K pre-edge features are consistent with these findings. |
| Citation: |
Letter to Nature |
| Keywords: |
eXAFS;ferroelectric;polarization;STO |
| Research Areas: |
Characterization, Ceramics |
