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|Author(s):||F S. Aguirre-Tostado; A Herrera-Gomez; Joseph C. Woicik; R Droopad; Z Yu; D G. Schlom; E Karapetrova; P Zschack;|
|Title:||Displacive Phase Transition in SrTiO3 Thin Films Grown on Si(001)|
|Abstract:||Polarization dependent x-ray absorption fine structure measurements performed at the Ti K edge together with x-ray diffraction have been used to study the local structure in SrTiO3 thin films grown epitaxially on Si(001). SrTiO3 layers on Si(001) are found to be unstrained for a thickness of approximately 80 A, a splitting of the Ti-O distance perpendicular to the interface is observed: rTiO = 1.87 +/- 0.02 and rTiO = 2.09 +/- 0.06 , whereas only a single Ti-O distance is observed within the plane of the interface: rTiO = 1.95 +/- 0.01 . These findings indicate a tetragonal plus displacive ferroelectric distortion of the cubic SrTiO3 unit cell in response to the compressive strain imposed on the SrTiO3 layer by the Si substrate. Modification of the Ti K pre-edge features are consistent with these findings.|
|Citation:||Letter to Nature|
|Research Areas:||Characterization, Ceramics|