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Publication Citation: Component Segregation in Model Chemically Amplified Resists

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Author(s): John T. Woodward IV; Theodore Fedynyshyn; David Astolfi; Susan Cann; Michael Leeson;
Title: Component Segregation in Model Chemically Amplified Resists
Published: March 15, 2007
Abstract: We have applied chemical force microscopy (CFM) to probe the chemical segregation of resist materials. CFM is capable of providing simultaneous information about surface topography and chemical heterogeneity of partiallt developed resist films. We have used CFM to study ESCAP based resists that are used in 248 nm and extreme ultraviolet (EUV) lithography. We observe changes in both the material roughness and chemical heterogeneity of the resist with the introduction of PAG and with exposure and post exposure bake (PEB). We conclude that chemical segregation in the resist can influence the innate material roughness.
Conference: SPIE Proceedings
Proceedings: SPIE Proceedings | Advanced Lithography | 2007 | SPIE
Volume: 6519
Pages: pp. 651915-1 - 651915-8
Dates: February 25-27, 2007
Keywords: AFM,chemical force microscopy,line edge roughness,PAG,photoresist
Research Areas: Optical lithography
PDF version: PDF Document Click here to retrieve PDF version of paper (1MB)