Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||John T. Woodward IV; Theodore Fedynyshyn; David Astolfi; Susan Cann; Michael Leeson;|
|Title:||Component Segregation in Model Chemically Amplified Resists|
|Published:||March 15, 2007|
|Abstract:||We have applied chemical force microscopy (CFM) to probe the chemical segregation of resist materials. CFM is capable of providing simultaneous information about surface topography and chemical heterogeneity of partiallt developed resist films. We have used CFM to study ESCAP based resists that are used in 248 nm and extreme ultraviolet (EUV) lithography. We observe changes in both the material roughness and chemical heterogeneity of the resist with the introduction of PAG and with exposure and post exposure bake (PEB). We conclude that chemical segregation in the resist can influence the innate material roughness.|
|Proceedings:||SPIE Proceedings | Advanced Lithography | 2007 | SPIE|
|Pages:||pp. 651915-1 - 651915-8|
|Dates:||February 25-27, 2007|
|Keywords:||AFM,chemical force microscopy,line edge roughness,PAG,photoresist|
|Research Areas:||Optical lithography|
|PDF version:||Click here to retrieve PDF version of paper (1MB)|