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Publication Citation: In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition

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Author(s): James E. Maslar; Wilbur S. Hurst; Donald R. Burgess Jr.; William A. Kimes; Nhan V. Nguyen; Elizabeth F. Moore; Joseph T. Hodges;
Title: In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition
Published: January 01, 2008
Abstract: Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high  dielectric layers required for many nanoelectronics applications.  In situ monitoring of ALD processes has the potential to yield insights that will enable efficiencies in film growth, in the development of deposition recipes, and in the design and qualification of reactors.  This report describes the status of a project to develop in situ diagnostics for hafnium oxide ALD processes.  The focus is on an examination of the utility of Fourier transform infrared spectroscopy and diode laser spectroscopy for optimizing deposition conditions, rather than simply monitoring precursor delivery.  Measurements were performed in a single-wafer, warm-wall, horizontal-flow reactor during hafnium oxide ALD involving tetrakis(ethylmethylamino) hafnium and water.  Measurements were performed near the wafer surface under a range of deposition conditions in an effort to correlate gas phase measurements with surface processes.
Conference: Third International Symposium on Dielectrics for Nonosystems: Materials Science, Processing, Reliability and Manufacturing at 23th Meeting of the Electrochemical Society
Proceedings: ECS Transactions, Volume 13, Issue 2
Volume: 13
Issue: 2
Pages: pp. 139 - 150
Location: Phoenix, AZ
Dates: May 18, 0008-May 22, 2008
Keywords: accumulation layer, depletion layer, gallium antimonide, GaSb, n-type doping, p-type doping, Raman spectroscopy, surface space
Research Areas: Nanoelectronics and Nanoscale Electronics
PDF version: PDF Document Click here to retrieve PDF version of paper (291KB)