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|Author(s):||William F. Egelhoff Jr.; Mark D. Stiles; David P. Pappas; S Alvarado; J Gregg; J Bland; R A. Buhrman; Daniel T. Pierce; J Byers; M Johnson; B Jonker;|
|Title:||Spin Polarization of Injected Electrons|
|Published:||May 17, 2002|
|Abstract:||A recent paper in Science made the claim of 92% polarization for the injection spin polarized electrons from a Ni scanning tunneling microscopy (STM) tip into GaAs(110). Actually they state their result as 92% efficiency for the injection of 100% importance for the emerging field of Spintronics. If true, it would suggest that the field is rapidly closing in on the key goal of 100% efficiency. However, we wish to inform the Science readership that the claim is by no means substantiated by a close examination of the work, and in fact serious errors in the analysis imply that the actual polarization was much less than 92%. Since the tip is not 100% spin polarized, it makes no sense to break this polarization into a tip polarization times an efficiency.|
|Pages:||pp. 1195 - 1195|
|Keywords:||gallium arsnide tunneling nickel,spin polarization|
|PDF version:||Click here to retrieve PDF version of paper (9KB)|