Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Spin Polarization of Injected Electrons

NIST Authors in Bold

Author(s): William F. Egelhoff Jr.; Mark D. Stiles; David P. Pappas; S Alvarado; J Gregg; J Bland; R A. Buhrman; Daniel T. Pierce; J Byers; M Johnson; B Jonker;
Title: Spin Polarization of Injected Electrons
Published: May 17, 2002
Abstract: A recent paper in Science made the claim of 92% polarization for the injection spin polarized electrons from a Ni scanning tunneling microscopy (STM) tip into GaAs(110). Actually they state their result as 92% efficiency for the injection of 100% importance for the emerging field of Spintronics. If true, it would suggest that the field is rapidly closing in on the key goal of 100% efficiency. However, we wish to inform the Science readership that the claim is by no means substantiated by a close examination of the work, and in fact serious errors in the analysis imply that the actual polarization was much less than 92%. Since the tip is not 100% spin polarized, it makes no sense to break this polarization into a tip polarization times an efficiency.
Citation: Science
Volume: 296
Issue: No. 5571
Pages: pp. 1195 - 1195
Keywords: gallium arsnide tunneling nickel,spin polarization
Research Areas: Nanomagnetics
PDF version: PDF Document Click here to retrieve PDF version of paper (9KB)