Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Insulating Cs Overlayer on InSb(110)

NIST Authors in Bold

Author(s): L Whitman; Joseph A. Stroscio; Robert A. Dragoset; Robert Celotta;
Title: Insulating Cs Overlayer on InSb(110)
Published: January 01, 1991
Abstract: Cesium overlayers on room-temperature InSb(110) have been studied with scanning tunneling microscopy and spectroscopy. A two-dimensional (2D) overlayer is observed, consisting of four-atom, Cs(110)-like planar clusters arranged in a c(2 x 6) superlattice. Interestingly, current-versus-voltage (I-V) spectra exhibit a band gap of {asymp} 0.6 eV, larger than the substrate band gap of {asymp} 0.15 eV. The I-V spectra are very similar to those observed on the similar 2D overlayer on GaAs (110), suggesting that the measured gap is a property of the 2D Cs film. The possible origins of this insulating behavior are discussed.
Citation: Physical Review B (Condensed Matter and Materials Physics)
Volume: 44
Issue: 11
Pages: pp. 5951 - 5954
Research Areas: Scanning tunneling microscopy (STM)