| Author(s): |
Mark D. Stiles; D Hamann; |
| Title: |
Kinematic Theory of BEEM Spectroscopy of Silicon-Silicide Interfaces |
| Published: |
January 01, 1991 |
| Abstract: |
The electronic structure of the materials being measured has a strong effect on the spectroscopy of the interface between them measured by ballistic electron emission microscopy (BEEM). Specific calculations for CoSi2/Si(111) and NiSi2/Si(111) based on the calculation band structures of the materials illustrate some of the observable effects due to band structures, particularly of the overlayer. The BEEM spectra for CoSi2/Si(111) show a delayed onset due to a mismatch of the states near the conduction band minimum in the Si. The spectra for NiSi2/Si(111) show structure due to a decrease in the density of states in the NiSi2 at approximately 1.8 eV above the Fermi level |
| Citation: |
Journal of Vacuum Science and Technology B |
| Volume: |
9 |
| Issue: |
4 |
| Pages: |
pp. 2394 - 2398 |
| Research Areas: |
Nanoelectronics and Nanoscale Electronics |
