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|Author(s):||Loucas G. Christophorou; James K. Olthoff;|
|Title:||Applications of Electron-Interaction Reference Data to the Semiconductor Industry|
|Published:||December 01, 1998|
|Abstract:||Many advanced plasma diagnostic techniques and plasma models require fundamental physical data in order to make accurate measurements or predictions. Fundamental electron-interaction data are among the most critical since electron collisions are the primary source of ions, reactive radicals, and excited species present in etching, cleaning, and decomposition plasmas. In this paper we present (i) a description of some semiconductor applications that require fundamental electron-interaction data, (ii) an explanation of the NIST program to provide these data, (iii) a summary of the available fundamental electron-interaction data for plasma processing gases, and (iv) a discussion of general data needs.|
|Proceedings:||Characterization and Metrology for ULSI Technology|
|Pages:||pp. 437 - 441|
|Dates:||March 23-27, 1998|
|Keywords:||carbon tetrafluoride,cross section,electron interaction,electron transport,perfluoroethane,perfluoropropane,plasma processing|
|Research Areas:||Electronics & Telecommunications|
|PDF version:||Click here to retrieve PDF version of paper (3MB)|