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Publication Citation: Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module

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Author(s): Tam H. Duong; Angel Rivera-Lopez; Allen R. Hefner Jr; Jose M. Ortiz;
Title: Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Published: February 24, 2008
Abstract: This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switches, where 10 kV SiC Junction Barrier Schottky (JBS) anti-parallel diodes along with 100 V Silicon JBS series reverse-blocking diodes are used to protect the SiC MOSFETs from reverse conduction. The behavioral boost converter is designed to operate a single power switch and a single power diode for continuous 20 kHz hard switching conditions at 5 kV and 100 A. The test circuit contains the model for the 100A, 10 kV SiC half-bridge power module with the upper MOSFET gate turned off. The simulated waveforms demonstrate fast switch performance (<100 ns) with minimal turn-on current spikes resulting from charging the capacitances of the other MOSFET and JBS diodes in the module. The results also indicate that the combination of the 10 kV JBS anti-parallel diode along with the series low-voltage Silicon JBS reverse-blocking diode is effective in protecting the SiC MOSFETs from reverse conduction.
Proceedings: Proc., Power Electronics Specialist Conference
Location: Austin, TX
Dates: February 24-28, 2008
Keywords: anti- parallel diode;behavioural boost converter;fast switch performance;Half-bridge power module;High-Voltage High-Frequency (HV-HF);reverse blocking series diode
Research Areas: Semiconductors
PDF version: PDF Document Click here to retrieve PDF version of paper (2MB)