NIST Authors in Bold
| Author(s): | Michael W. Cresswell; William Gutherie; R. Dixon; Richard A. Allen; Christine E. Murabito; Joaquin (. Martinez; |
|---|---|
| Title: | RM 8111: Development of a Prototype Linewidth Standard |
| Published: | May 01, 2006 |
| Abstract: | Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototype Single-Crystal CD Reference Materials for calibrating CD-metrology instruments that are used in semiconductor manufacturing. The reference material is configured as a 9-mm x 11-mm silicon test-structure chip that is mounted in a 200-mm silicon carrier wafer. The fabrication of both the chip itself and the carrier wafer use the type of lattice-plane-selective etching that is commonly employed in MEMS fabrication. The certified CDs of the reference features are determined from AFM-CD measurements that are referenced to high-resolution transmission-electron microscopy images that reveal the cross-section counts of lattice planes having a pitch that is traceable to the SI meter. |
| Citation: | Journal of Research (NIST JRES) - |
| Volume: | 111 |
| Issue: | 3 |
| Pages: | pp. 187 - 203 |
| Research Areas: | Semiconductors |