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Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device
Published
Author(s)
Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez
Abstract
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed.
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Hefner Jr., A.
, Sei-Hyung, R.
, Brett, H.
, Berning, D.
, Hood, C.
, Ortiz-Rodriguez, J.
, Rivera-Lopez, A.
, Duong, T.
, Akuffo, A.
and Hernandez, M.
(2006),
Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Tampa, FL, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32365
(Accessed October 13, 2025)