Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

NIST Authors in Bold

Author(s): Allen R. Hefner Jr.; Ryu Sei-Hyung; Hull Brett; David W. Berning; Colleen E. Hood; Jose M. Ortiz-Rodriguez; Angel Rivera-Lopez; Tam H. Duong; Adwoa Akuffo; Madelaine H. Hernandez;
Title: Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device
Published: October 01, 2006
Abstract: The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed.
Conference: IEEE Industrial Applications Society Meeting
Proceedings: Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Location: Tampa, FL
Dates: October 8-12, 2006
Keywords: "," "DARPA HPE," "HPE," "HV-HF (High-voltage, high-frequency power devcies," "power devices," "solid state power substations," "switch mode power conversion," forward-bia degradation,"silicon-carbide,) "wide bandgap semiconductor
Research Areas: Electronics & Telecommunications
PDF version: PDF Document Click here to retrieve PDF version of paper (674KB)