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|Author(s):||Allen R. Hefner Jr.; Ryu Sei-Hyung; Hull Brett; David W. Berning; Colleen E. Hood; Jose M. Ortiz-Rodriguez; Angel Rivera-Lopez; Tam H. Duong; Adwoa Akuffo; Madelaine H. Hernandez;|
|Title:||Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device|
|Published:||October 01, 2006|
|Abstract:||The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed.|
|Conference:||IEEE Industrial Applications Society Meeting|
|Proceedings:||Proc., IEEE Industry Applications Society (IAS) Annual Meeting|
|Dates:||October 8-12, 2006|
|Keywords:||"," "DARPA HPE," "HPE," "HV-HF (High-voltage, high-frequency power devcies," "power devices," "solid state power substations," "switch mode power conversion," forward-bia degradation,"silicon-carbide,) "wide bandgap semiconductor|
|Research Areas:||Electronics & Telecommunications|
|PDF version:||Click here to retrieve PDF version of paper (674KB)|