Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

Published

Author(s)

Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez

Abstract

The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed.
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 8-12, 2006
Conference Location
Tampa, FL, USA
Conference Title
IEEE Industrial Applications Society Meeting

Keywords

", " "DARPA HPE, " "HPE, " "HV-HF (High-voltage, high-frequency power devcies, " "power devices, " "solid state power substations, " "switch mode power conversion, " forward-bia degradation, "silicon-carbide, ) "wide bandgap semiconductor

Citation

Hefner Jr., A. , Sei-Hyung, R. , Brett, H. , Berning, D. , Hood, C. , Ortiz-Rodriguez, J. , Rivera-Lopez, A. , Duong, T. , Akuffo, A. and Hernandez, M. (2006), Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Tampa, FL, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32365 (Accessed October 13, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created September 30, 2006, Updated October 12, 2021
Was this page helpful?