Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

Published

October 1, 2006

Author(s)

Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez

Abstract

The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed.

Proceedings Title

Proc., IEEE Industry Applications Society (IAS) Annual Meeting

Conference Dates

October 8-12, 2006

Conference Location

Tampa, FL, USA

Conference Title

IEEE Industrial Applications Society Meeting

Pub Type

Conferences

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Keywords

", " "DARPA HPE, " "HPE, " "HV-HF (High-voltage, high-frequency power devcies, " "power devices, " "solid state power substations, " "switch mode power conversion, " forward-bia degradation, "silicon-carbide, ) "wide bandgap semiconductor

Citation

Hefner Jr., A. , Sei-Hyung, R. , Brett, H. , Berning, D. , Hood, C. , Ortiz-Rodriguez, J. , Rivera-Lopez, A. , Duong, T. , Akuffo, A. and Hernandez, M. (2006), Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Tampa, FL, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32365 (Accessed April 25, 2024)