Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Bimodal Size Distribution of Self-Assembled InGaAs Quantum Dots

NIST Authors in Bold

Author(s): Solveig Anders; C. S. Kim; Benjamin D. Klein; Mark W. Keller; Richard P. Mirin;
Title: Bimodal Size Distribution of Self-Assembled InGaAs Quantum Dots
Published: September 23, 2002
Abstract: We investigate energy level quantization in self-assembled InGaAs quantum dots that are embedded In a GaAs matrix. We use capacitance and photoluminescence spectroscopy to analyze the evolution of the energy levels with varying amounts of deposited InGaAs. These techniques suggest that the size distribution of the quantum dots contains two well-separated peaks. Transmission electron microscopy confirms a bimodal size distribution and further shows that the big and the small quantum dots have different shapes. In addition, we use an effective-mass based method to calculate the lower energy states of quantum dots with the physical dimensions obtained by transmission electron and atomic force microscopies. our results allow us to construct the energy level diagrams of the two kinds of quantum dots.
Citation: Physical Review B (Condensed Matter and Materials Physics)
Volume: 66
Issue: 12
Pages: pp. 125309-1 - 125309-5
Keywords: atomic force microscopy,capacitance spectroscopy,energy levels,photoluminescence,quantum dots,transmission electron microscopy
Research Areas: Nanoelectronics and Nanoscale Electronics
PDF version: PDF Document Click here to retrieve PDF version of paper (260KB)