NIST logo

Publication Citation: X-ray Diffraction, Photoluminescence and Composition Standards of Compound Semiconductors

NIST Authors in Bold

Author(s): Alexana Roshko; Kristine A. Bertness; J T. Armstrong; Ryna B. Marinenko; Marc L. Salit; Lawrence H. Robins; Albert J. Paul; R J. Matyi;
Title: X-ray Diffraction, Photoluminescence and Composition Standards of Compound Semiconductors
Published: January 01, 2003
Abstract: Work is underway to develop composition standards and standardized assessment procedures for compound semiconductors. An AlGaAs composition standard with less than 2% uncertainty is being developed. The improved accuracy of this standard is being achieved by combining an array of analysis techniques, including RHEED, PL, EMPA and ICP-OES. A major part of the work has been quantification of the accuracy limits of each technique. The influence of peak fitting method, measurement temperature, and doping concentration on PL measurements of AlGaAs layers has been measured. Similar work is underway for PL analysis of InGaAsP and for XRD analysis of a wide variety of materials in order to develop standardized assessment procedures. An inter-laboratory comparison was made of XRD and PL measurements of InGaAsP layers. The study demonstrated that material nonuniformity dominated the variation in the XRD measurements; but the uniformity was sufficient to allow PL measurement variations to be assessed.
Citation: Physica Status Solidi
Volume: 0
Issue: 3
Pages: pp. 992 - 997
Keywords: AlGaAs;AlGaAs SRM;composition standards;EMPA;ICP-OES;InGaAsP;photoluminescence;round robin;X-ray diffraction
Research Areas: