The TSOM method provides three-dimensional nanoscale metrology using a conventional optical microscope. Substantial improvements in defect detectability using the TSOM method will be presented. The TSOM method shows potential to (i) detect phase defects on EUV masks down to 13 nm SEVD, (ii) distinguish pits from bumps, and (iii) infer depth information of buried particles. The TSOM method is economical as it requires a low cost 193 nm optical microscope compared to an AIT, and has high through-put. As a result, the TSOM method appears to be a good method for detection of defects on EUV lithography masks.
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