The challenges facing current metrologies based on SEM, AFM, and light scatterometry for technology nodes of 157 nm imaging and beyond suggest that the development of new metrologies capable of routine measurement in this regime are required. We provide results of initial tests of a measurement technique based on Small Angle X-ray Scattering (SAXS) capable of rapid measurements of test samples produced using conventional test masks without significant sample preparation. Using a sample photoresist grating, the technique is shown to apply equally to both organic, including photoresist, and inorganic patterns, including metal and oxide. The sub-Angstrom wavelength provides nanometer level resolution, with significant room for increasing resolution to sub-nanometer levels. The current technique is shown as a dramatic improvement over prior attempts using neutron scattering, both in resolution, but also in its practical application within industry.
Proceedings Title: Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography XVII, Daniel J. Herr, Editor
Conference Dates: February 24, 2003
Conference Location: Santa Clara, CA
Conference Title: Scatterometry
Pub Type: Conferences
lithgraphy, nanostructures neutron scattering, pattern metrology, x-ray scattering