In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas-Phase Processes

Published

September 1, 2003

Author(s)

James E. Maslar, Wilbur S. Hurst

Abstract

During silicon thermal chemical vapor deposition, reactions occurring in the gas phase above the wafer surface can strongly influence the deposited film quality. Depending on the process conditions, e.g., temperature, silicon precursor, carrier gas, pressure, etc., gas phase reactions can include not only precursor decomposition but also nucleation of silicon nanoparticles above the wafer surface. Optical diagnostics were employed to investigate such processes during silicon chemical vapor deposition via silane pyrolysis. Measurements were performed in a vertical flow, rotating disk reactor under various process conditions. Gas temperature profiles were determined using rotational Raman spectroscopy. Gas phase silicon particle spatial distributions were determined with elastic light scattering. Chemical composition of the particles was investigated with vibrational Raman spectroscopy. Data from these measurements have been used for validation of a numerical silicon chemical vapor deposition process model.

Proceedings Title

Characterization and Metrology for ULSI Technology, International Conference | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP

Volume

683

Conference Dates

March 1, 0024

Conference Title

AIP Conference Proceedings

Pub Type

Conferences

Keywords

in situ Raman spectroscopy, silane pyrolysis, silicon thermal chemical vapor depositio

Citation

Maslar, J. and Hurst, W. (2003), In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas-Phase Processes, Characterization and Metrology for ULSI Technology, International Conference | | Characterization and Metrology for ULSI Technology: 2003 International Conference on Characterization and Metrology for ULSI Technology | AIP (Accessed April 23, 2024)