In this work, we examine a series resistance extraction technique which yields accurate values from single nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation and might possibly serve as new technique to monitor reliability in advanced devices.
Proceedings Title: 2012 IEEE International Integrated Reliability Workshop Final Report
Conference Dates: October 14-18, 2012
Conference Location: S. Lake Tahoe, CA
Conference Title: 2012 IEEE International Integrated Reliability Workshop
Pub Type: Conferences