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Displaying 1 - 4 of 4

Doping of MoTe2 via surface charge-transfer in ambient air

March 19, 2020
Author(s)
Gheorghe Stan, Cristian Ciobanu, Sri Ranga Jai Likith, Asha Rani, Sergiy Krylyuk, Albert Davydov
Doping is a key process that facilitates the use of semiconductors for electronic and optoelectronic devices, by which the concentration and type of majority carriers (electrons or holes) can be modified controllably to achieve desired conduction

Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness

November 9, 2018
Author(s)
Albert Davydov, Mona Zaghloul, Sergiy Krylyuk, Ratan K. Debnath, Asha Rani, Kyle J. DiCamillo, Payam Taheri
In this study, electronic properties of field-effect transistors (FETs) fabricated from exfoliated MoTe2 single crystals are investigated as a function of channel thickness. The conductivity type in FETs gradually changes from n-type for thick MoTe2 layers

Electronic Characteristics of MoSe2 and MoTe2 for Nanoelectronic Applications

October 15, 2018
Author(s)
Asha Rani, Shiqi Guo, Sergiy Krylyuk, Albert Davydov
Single-crystalline MoSe2 and MoTe2 platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors

August 3, 2016
Author(s)
Ratan K. Debnath, MD R. Hasan, Arunima Singh, Vladimir P. Oleshko, Shiqi Guo, Asha Rani, Abhishek Motayed, Nhan V. Nguyen, Albert Davydov
The need for low-cost high-performance broadband photon detection with sensitivity in the near infrared (NIR) has driven interest in new materials that combine high absorption with traditional electronic infrastructure (CMOS) compatibility. Here, we