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Search Publications by: Yanfei Yang (Fed)

Displaying 26 - 30 of 30

Quantized Hall resistance in large-scale monolayer graphene

November 28, 2015

Author(s)

Yanfei Yang, Chiashain Chuang, Chieh W. Liu, Randolph Elmquist

Abstract: Graphene is an atomic-thickness carbon lattice that can be exfoliated from solid graphite or grown using high temperature processing methods on a variety of substrates. Many practical applications of large-area graphene, however, are limited by

Development of Low Carrier Density Graphene Devices

August 1, 2014

Author(s)

Yanfei Yang, Lung-I Huang, David B. Newell, Yasuhiro Fukuyama, Mariano A. Real, Randolph Elmquist

Epitaxial graphene on SiC(0001) is used to fabricate Hall bar structures for metrological applications with a fabrication process that has been developed to eliminate organic chemical contamination of the graphene. Before any lithographic patterning a

Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling

July 1, 2014

Author(s)

Randolph E. Elmquist, Chiashain Chuang, Yanfei Yang, Lung-I Huang, Chi-Te Liang

The development of graphene electronic devices produced by industry will rely on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at

Low carrier density epitaxial graphene devices on SiC

June 1, 2014

Author(s)

Yanfei Yang, Lung-I Huang, Yasuhiro Fukuyama, Fan-Hung Liu, Mariano Real, Paola Barbara, Chi-Te Liang, David B. Newell, Randolph Elmquist

Monolayer epitaxial graphene grown on a hexagonal silicon carbide (SiC) substrate is typically found to be heavily n-doped (10e13 cm-2) and in most devices made with the as-grown epitaxial graphene the quantized Hall resistance plateau with Landau level

Localization and electron-electron interactions in few-layer epitaxial graphene

May 28, 2014

Author(s)

Randolph E. Elmquist, Fan-Hung Liu, Lung-I Huang, Yasuhiro Fukuyama, Chi-Te Liang, Yanfei Yang

We study the quantum corrections caused by electron-electron (e-e) interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. Our results demonstrate that the diffusive