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Displaying 1 - 15 of 15

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022
Author(s)
Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul
Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET)

Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness

November 9, 2018
Author(s)
Albert Davydov, Mona Zaghloul, Sergiy Krylyuk, Ratan K. Debnath, Asha Rani, Kyle J. DiCamillo, Payam Taheri
In this study, electronic properties of field-effect transistors (FETs) fabricated from exfoliated MoTe2 single crystals are investigated as a function of channel thickness. The conductivity type in FETs gradually changes from n-type for thick MoTe2 layers

Ultraviolet photodetectors based on transition metal oxides

September 1, 2016
Author(s)
Ratan K. Debnath, Albert Davydov
Ultraviolet (UV) photodetector (PD) has attracted extensive attention owing to their broad application in digital imaging, missile plume detection, optical communications, and biomedical sensing. Conventional Si based UV PD requires costly high pass

Windowless CdSe/CdTe Solar Cells with Differentiated Back Contacts: J-V, EQE and Photocurrent Mapping

August 26, 2016
Author(s)
Daniel Josell, Ratan K. Debnath, Jong Yoon Ha, Jonathan E. Guyer, Nhan V. Nguyen, M. A. Sahiner, C Reehil, W. A. Manners
This paper presents a study of windowless CdSe/CdTe thin film photovoltaic devices with in-plane patterning at a submicrometer length scale. The photovoltaic cells are fabricated upon two interdigitated comb electrodes pre-patterned at micrometer length

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors

August 3, 2016
Author(s)
Ratan K. Debnath, MD R. Hasan, Arunima Singh, Vladimir P. Oleshko, Shiqi Guo, Asha Rani, Abhishek Motayed, Nhan V. Nguyen, Albert Davydov
The need for low-cost high-performance broadband photon detection with sensitivity in the near infrared (NIR) has driven interest in new materials that combine high absorption with traditional electronic infrastructure (CMOS) compatibility. Here, we

Structural and optical nanoscale analysis of GaN core-shell microrod arrays fabricated by combined top-down and bottom-up process on Si (111)

May 15, 2016
Author(s)
Sergiy Krylyuk, Marcus Muller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Ratan K. Debnath, Jong Yoon Ha, Baomei Wen, Paul T. Blanchard, Alexana Roshko, Abhishek Motayed, Matthew R. King, Albert Davydov, Jurgen Christen
Large arrays of GaN core-shell microrods were fabricated on Si(111) substrates applying a combined bottom-up and top-down approach which includes inductively coupled plasma (ICP) etching of patterned GaN films grown by metal-organic vapor phase epitaxy

UV-assisted room-temperature chemiresistive NO2 sensor based on TiO2 thin film

December 24, 2015
Author(s)
Ting Xie, Nichole Sullivan, Kristen L. Steffens, Baomei Wen, Guannan Liu, Ratan K. Debnath, Albert Davydov, Romel D. Gomez, Abhishek Motayed
TiO2 thin film based, chemiresistive sensors for NO2 gas which operate at room temperature under ultraviolet (UV) illumination have been demonstrated in this work. The rf-sputter deposited and post-annealed TiO2 thin films have been characterized by atomic

High-performing visible-blind photodetectors based on SnO2/CuO nanoheterojunctions

December 14, 2015
Author(s)
Ratan K. Debnath, Ting Xie, MD R. Hasan, Nhan V. Nguyen, Abhishek Motayed
We report on the significant performance enhancement of SnO2 thin film ultraviolet (UV) photodetectors (PDs) through incorporation of CuO/SnO2 pn nanoscale heterojuctions. The nanoheterojunctions are self-assembled by sputtering Cu clusters that oxidize in

Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

October 1, 2015
Author(s)
Ratan K. Debnath, MD R. Hasan, Ting Xie, Sara C. Barron, Guannan Liu, Nhan V. Nguyen, Abhishek Motayed, M V. Rao
A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The fabricated devices showed

Solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector

January 19, 2015
Author(s)
Ratan K. Debnath, Ting Xie, Baomei Wen, Wei Li, Abhishek Motayed, Nhan V. Nguyen
This paper presents a high efficiency heterojunction p-NiO/n-ZnO thin film ultraviolent (UV) photodetector fabricated on conductive glass substrates. The devices are fabricated by using a simple spin-coating layer-by-layer method from precursor solutions

Top-Down Fabrication of Large-Area GaN Micro and Nano Pillars

February 19, 2014
Author(s)
Albert Davydov, Ratan K. Debnath, B. Wen, Dipak Paramanik, Abhishek Motayed, M. King
Large-area gallim nitride (GaN) nanopillars (NPs) arrays were fabricated by plasma etching of lithographically patterned GaN thin-film grown on Si substrate. Deep-UV lithography, inductively-coupled plasma etching, and follow-on chemical treatments were

Photocurrent Mapping of 3D CdSe/CdTe Windowless Solar Cells

August 22, 2013
Author(s)
Carlos M. Hangarter, Ratan K. Debnath, Jong Y. Ha, M. E. Sahiner, C. J. Reehil, W. A. Manners, Daniel Josell
This paper details the use of scanning photocurrent microscopy to examine localized current collection efficiency of thin film photovoltaic devices with in-plane patterning at a submicrometer length scale. The devices are based upon two interdigitated comb

Backcontact CdSe/CdTE Windowless Solar Cells

February 1, 2013
Author(s)
Donguk Kim, Carlos M. Hangarter, Ratan K. Debnath, Jong Y. Ha, Carlos R. Beauchamp, Matthew D. Widstrom, Jonathan E. Guyer, Nhan Van Nguyen, B. Y. Yoo, Daniel Josell
This paper details the fabrication and properties of CdSe/CdTe thin film photovoltaic devices with a dual back contact geometry. Device fabrication involves cadmium selenide electrodeposition on one of two interdigitated electrodes on a pre-patterned