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Search Publications by: Aric Sanders (Fed)

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Displaying 51 - 54 of 54

MESFETs made from individual GaN nanowires

November 1, 2008
Author(s)
Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Lorelle Mansfield, Aric W. Sanders, Norman A. Sanford
In this paper, we demonstrate novelMESFETs based on individual GaN nanowires. The Pt/Au Schottky gates exhibited excellent two-terminal Schottky diode rectification behavior. The average effective Schottky barrier height was 0.87 eV, with an average

Resistivity study of si-doped GaN nanowires grown by catalyst-free MBE

September 16, 2008
Author(s)
Lorelle Mansfield, Paul T. Blanchard, Devin M. Rourke, Aric W. Sanders, Norman A. Sanford, Kristine A. Bertness
GaN nanowires doped with silicon were grown on Si(111) substrates by catalyst-free molecular beam epitaxy (MBE). Contacts were fabricated to single nanowires with a Ti/Al metallization scheme. Low-resistance ohmic contacts were achieved after annealing for

Nucleation and propagation mechanisms for catalyst-free growth of GaN nanowires

September 16, 2007
Author(s)
Kristine A. Bertness, Devin M. Rourke, Alexana Roshko, Lorelle Mansfield, Aric W. Sanders, Todd E. Harvey, Norman A. Sanford
Nucleation of GaN nanowires without catalysts in molecular beam epitaxy is shown to be a distinct process from nanowire propagation. Nanowire growth is relatively insensitive to starting conditions once the nanowire morphology is established, and is driven

Persistent photoconductivity studies of c-axis GaN nanowires grown by MBE

September 16, 2007
Author(s)
Norman Sanford, Paul T. Blanchard, Kristine A. Bertness, Alexana Roshko, Beau Burton, Lorelle Mansfield, John B. Schlager, Steven George, Aric Sanders
Photoconductivity (PC) and persistent photoconductivity (PPC) were measured on c-axis GaN nanowires (NWs) grown by catalyst-free nitrogen plasma assisted MBE on Si(111) substrates. Unintentionally doped n-type NWs from two separate growth batches were