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Search Publications by: Pavel Kabos (Fed)

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Displaying 26 - 50 of 130

Chapter 3. Extreme Impedance Measurements

September 15, 2017
Author(s)
Pavel Kabos, Thomas Mitchell (Mitch) Wallis
Microwave measurements of RF nanoelectronic devices present numerous challenges. Among these, perhaps the most difficult measurement challenge arises from the inherent, often extreme impedance mismatch between nanolectronic systems and conventional

Chapter 4. On-wafer measurements of RF nanoelectronic devices

September 15, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
The preceding chapters have introduced the core concepts and techniques of microwave measurements, in general, and techniques for microwave measurements of extreme impedance devices, in particular. Here, we narrow the focus further to on-wafer, microwave

Chapter 5. Modeling and validation of RF nanoelectronic devices

September 15, 2017
Author(s)
Thomas M. Wallis, Pavel Kabos
The development and engineering of nanoelectronic devices has been characterized by several significant technological trends. In addition to the ongoing scaling of feature sizes down to nanoscale dimensions, the need for superior performance has driven the

Vector-Network-Analyzer Calibration Using Line and Multiple Coplanar-Waveguide Offset Reflects

December 9, 2016
Author(s)
Arkadiusz C. Lewandowski, Wojciech Wiatr, Dazhen Gu, Nate Orloff, Thomas Mitchell (Mitch) Wallis, Pavel Kabos
We present the application of our newly developed multi-reflect-thru technique to vector-network-analyzer calibration in the on-wafer environment. This technique uses a set of highly-reflective one-port devices, referred to as offset-reflects, and a single

Methylammonium lead iodide grain boundaries exhibit depth-dependent electrical properties

September 23, 2016
Author(s)
Gordon A. MacDonald, Mengjin Yang, Samuel Berweger, Jason Killgore, Pavel Kabos, Joeseph Berry, Kai Zhu, Frank W. DelRio
In this letter, the nanoscale through-film and lateral photoresponse and conductivity of large-grained methylammonium lead iodide thin films are studied. In perovskite solar cells (PSC), these films result in efficiencies > 17%. The top surface of the

Near-field microwave microscopy of one-dimensional nanostructures

May 23, 2016
Author(s)
Samuel Berweger, Paul T. Blanchard, Rebecca C. Quardokus, Frank W. DelRio, Thomas Mitchell (Mitch) Wallis, Pavel Kabos, Sergiy Krylyuk, Albert Davydov
With the ability to measure sample conductivity with nanometer spatial resolution, scanning microwave microscopy (SMM) is a powerful tool to study nanoscale electronic systems and devices. Here we demonstrate the general capability to image electronic

Low Frequency Radio Wave Detection of Electrically Active Defects in Dielectrics

May 19, 2016
Author(s)
Yaw S. Obeng, Chukwudi A. Okoro, Pavel Kabos, Rhonda R. Franklin, Papa K. Amoah
In this paper, we discuss the use of low frequency (up to 300 MHz) radio waves (RF) to detect and characterize electrical defects present in the dielectrics of emerging integrated circuit devices. As an illustration, the technique is used to monitor the

Near-field control and imaging of free charge carrier variations in GaN nanowires

February 15, 2016
Author(s)
Samuel Berweger, Paul T. Blanchard, Matthew Brubaker, Kevin J. Coakley, Norman A. Sanford, Thomas Mitchell (Mitch) Wallis, Kris A. Bertness, Pavel Kabos
Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronic properties. Here we investigate local variations in electronic structure across individual n

On-wafer Magnetic Resonance of Magnetite Nanoparticles

May 11, 2015
Author(s)
Charles A. Little, Stephen E. Russek, James C. Booth, Pavel Kabos, Robert J. Usselman
Magnetic resonance measurements of ferumoxytol and TEMPO were made using an on-wafer transmission line technique with a vector network analyzer, allowing for broadband measurements of small sample volumes (4 nl) and a small numbers of spin (1 nmole). On

Microwave Near-Field Imaging of Two-Dimensional Semiconductors

January 27, 2015
Author(s)
Samuel Berweger, Joel Weber, Jimmy J. Li, Jesus M. Velazquez, Adam Pieterick, Norman A. Sanford, Albert V. Davydov, Thomas Mitchell (Mitch) Wallis, Pavel Kabos
Optimizing new generations of 2D devices based on van der Waals materials will require techniques capable of measuring variations in electronic properties in situ and with nanometer spatial resolution. We perform scanning microwave microscopy (SMM) imaging

GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

September 25, 2014
Author(s)
Joel Weber, Paul T. Blanchard, Aric Sanders, Jonas Gertsch, Steven George, Samuel Berweger, Atif A. Imtiaz, Thomas Mitchell (Mitch) Wallis, Kris A. Bertness, Pavel Kabos, Norman A. Sanford, victor bright
We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. The probe has a capacitive resolution of 0.03 fF, surpassing that of a commercial Pt tip. Imaging of MoS2 sheets found the probe to be immune to surface

Software for Dielectric characterization by microwave cavity perturbation corrected for non-uniform fields*

September 1, 2014
Author(s)
Nathan D. Orloff, Jan Obrzut, Christian J. Long, Thomas F. Lam, Pavel Kabos, David R. Novotny, James C. Booth, James A. Liddle
This software package was developed to analyze microwave cavity perturbation data in order to determine material dielectric properties. Example software is provided to assist with data acquisition and organization. Specifically, it is de-signed to be used

Dielectric characterization by microwave cavity perturbation corrected for non-uniform fields

July 23, 2014
Author(s)
Nathan D. Orloff, Jan Obrzut, Christian J. Long, Thomas F. Lam, James C. Booth, David R. Novotny, James A. Liddle, Pavel Kabos
The non-uniform fields that occur due to the slot in the cavity through which the sample is inserted and those due to the sample geometry itself decrease the accuracy of dielectric characterization by cavity perturbation at microwave frequencies. To

Gallium Nitride Nanowire Probe for Near-Field Scanning Microwave Microscopy

January 15, 2014
Author(s)
Joel C. Weber, Paul T. Blanchard, Aric W. Sanders, Atif A. Imtiaz, Thomas M. Wallis, Kevin J. Coakley, Kristine A. Bertness, Pavel Kabos, Norman A. Sanford, Victor M. Bright
We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. A single nanowire was Pt-bonded to a commercial Si cantilever prior to evaporation of a Ti/Al coating to provide a microwave signal pathway. Testing over a

Radio-Frequency and DC Electrical Characterization on a Modular MEMS Mechanical Test Platform for Nanomaterials

June 16, 2013
Author(s)
J. J. Brown, Thomas Mitchell (Mitch) Wallis, Pavel Kabos, Kristine A. Bertness, Norman Sanford, Victor Bright
In order to enable radio frequency (RF) data collection from a micromechanical system designed to strain nanomaterials, a coplanar electrical waveguide has been integrated with an actuated microscale stage. RF (100 MHz to 20 GHz) admittance measurements

Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals

June 1, 2013
Author(s)
Chukwudi A. Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S. Obeng
In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV daisy

Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis

May 28, 2013
Author(s)
Chukwudi A. Okoro, Yaw S. Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity in

Spatially-Resolved Dopant Characterization with a Scanning Microwave Microscope

March 25, 2013
Author(s)
Thomas M. Wallis, Atif A. Imtiaz, Alexandra E. Curtin, Pavel Kabos, Matthew D. Brubaker, Norman A. Sanford, Kristine A. Bertness
The scanning microwave microscope (SMM) is a tool for spatially-resolved microwave characterization of nanoelectronic materials and devices. The microscope incorporates a sharp, near-field probe, which measures local changes in reflected microwave signals

Near-Field Scaning Microwave Microscope (NSMM)

December 31, 2012
Author(s)
Atif A. Imtiaz, Thomas M. Wallis, Pavel Kabos
Electromagnetic waves in the microwave frequency range are an essential tool for the investigation of material and device properties across a broad range of applications. Examples of materials of interest include: ferroelectric materials, ferromagnetic

Microwave Behavior of polymer bonded Iron oxide nanoparticles

November 1, 2012
Author(s)
Pavel Kabos, A Caprile, Coisson Marco, F Fiorillo, O M. Manu, E. S. Olivetti, M. A. Olariu, Pasquale Massimo, V. A. Scarlatache
Samples composed of a polymer matrix were loaded with different fractions from 0 to 30% of Fe oxide magnetic nanoparticles with an average size ranging from 50 to 25 nm. The permittivity and permeability of the composites were determined upon a very wide

Measurement Science for "More-Than-Moore" Technology Reliability Assessments

October 12, 2012
Author(s)
Chukwudi A. Okoro, Jungjoon Ahn, Meagan V. Kelso, Pavel Kabos, Joseph Kopanski, Yaw S. Obeng
In this paper, we will present an overview of metrology issues and some of the techniques currently under development in our group at NIST, aimed at understanding some of the potential performance limiting issues in such highly integrated systems. We will

Microwave Measurements and Systematic Circuit-Model Extraction of Nanowire Metal Semiconductor Field Effect Transistors

August 24, 2012
Author(s)
Dazhen Gu, Thomas M. Wallis, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford
We present detailed on-wafer scattering parameter measurements and equivalent circuit modeling of metal semiconductor field effect transistor (MESFET) that incorporates a GaN nanowire (NW). A systematic procedure is established to extract intrinsic model