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Search Publications by: Kevin L. Silverman (Fed)

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Displaying 26 - 50 of 51

Superconducting Transition-Edge Sensors for Waveguide Coupled Single Photon Detection

July 25, 2010
Author(s)
Anna E. Fox, Adriana E. Lita, Brice R. Calkins, Kevin L. Silverman, Richard P. Mirin, Sae Woo Nam
We present the design and important preliminary superconducting properties of an evanescently coupled number resolving single photon detector operating near 1550 nm in development for integration into a silicon-on-insulator waveguide based optical system.

Dark pulse quantum dot diode laser

June 7, 2010
Author(s)
Mingming M. Feng, Kevin L. Silverman, Richard P. Mirin, Steven T. Cundiff
We describe an operating regime for passively mode-locked quantum dot diode laser where the output consists of a train of dark pulses, i.e., intensity dips on a continuous background. We show that a dark pulse train is a solution to the master equation for

Wavelength bistability and switching in two-section quantum-dot diode lasers

June 1, 2010
Author(s)
Mingming M. Feng, Kevin L. Silverman, Richard P. Mirin, Steven T. Cundiff
We report lasing wavelength bistability with respect to applied bias on the saturable absorbers in two-section mode-locked quantum dot lasers. We show data from three different devices exhibiting wavelength bistability. All lasers display wavelength

Intensity dynamics in semiconductor laser arrays

July 13, 2009
Author(s)
Kevin L. Silverman, Mingming M. Feng, Richard P. Mirin, Steven T. Cundiff, Matt Williams, J. Nathan N. Kutz
The dynamics of a five-emitter semiconductor laser array is studied theoretically with steady-state, oscillatory, and chaotic behaviors achieved. This provides a design tool for achieving oscillations whose frequency is related to injection current.

Intensity dynamics in a waveguide array laser

May 31, 2009
Author(s)
Mingming M. Feng, Steven T. Cundiff, Kevin L. Silverman, Richard Mirin, Matt Williams, J. Nathan N. Kutz
We report the intensity dynamics of a five-emitter laser array subject to a linearly decreasing injection current. The array produces oscillatory power output with a nearly Pi phase shift between the oscillations of adjacent waveguides.

Wavelength bistability in two-section mode-locked quantum-dot diode lasers

June 1, 2007
Author(s)
Mingming M. Feng, N. A. Brilliant, Steven T. Cundiff, Richard Mirin, Kevin L. Silverman
We report a two-section mode-locked quantum dot laser with an emission wavelength that is bistable with respect to applied bias on the saturable absorber region. The two stable lasing wavelengths for this device are 1173 nm and 1166 nm with a power

Temperature dependence of quantum dot homogeneous linewidth

May 26, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We examine the temperature dependence of the ground state homogeneous linewidth in InGaAs/GaAs quantum dots. Measurements are performed on quantum dots in a semiconductor waveguide.

High-resolution spectroscopic measurements of InGaAs/GaAs self-assembled quantum dots

May 12, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We report development of two absorption-based spectroscopic methods that have been adapted from atomic physics techniques to elucidate the basic physical properties of InGaAs/GaAs self-assembled quantum dots(SAQDs). Absorptive spectroscopic measurements

High-resolution spectral hole burning in InGaAs/GaAs quantum dots

February 10, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs/GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of

Carrier Dynamics and Homogeneous Broadening in Quantum Dot Waveguides

January 1, 2005
Author(s)
Kevin L. Silverman, Richard P. Mirin, Steven T. Cundiff, Benjamin Klein,
Coupling between InGaAs/GaAs quantum dots is investigated using differential transmission spectroscopy. Degenerate measurements show an initial carrier relaxation time that is relatively independent of carrier density. Two-color pump-probe techniques are

Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure

May 16, 2004
Author(s)
Kirk Ullmann, Mark Su, Kevin L. Silverman, Joseph J. Berry, Todd E. Harvey, Richard Mirin
We report room temperature photoluminescence from a Nd3+ doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd3+ ions.

Mode-Locked Erbium/Ytterbium Co-Doped Waveguide Laser

May 1, 2001
Author(s)
John B. Schlager, Berton Callicoatt, Kevin L. Silverman, Richard Mirin, Norman Sanford, D. L. Veasey
Picosecond pulses are generated from a passively mode-locked ER3+/Yb3+ co-doped planar waveguide laser in an extended cavity configuration with a semiconductor saturable absorber mode locker. Average output power exceeds 8 mW and is expected to increase

Multimode Lasing at Room Temperature from InGaAs/GaAs Quantum Dot Lasers

January 1, 2001
Author(s)
Benjamin D. Klein, Kevin L. Silverman, Richard Mirin
We demonstrate InGaAs/GaAs quantuum dot lasers with multimode lasing at room temperature immediately above threshold. The lasing modes are separated by about ten times the Fabry-Perot mode spacing, with several dark modes in between the lasing modes. Rate

Single-frequency and Mode-locked Er/Yb Co-doped Waveguide Lasers

January 1, 2001
Author(s)
Berton Callicoatt, John B. Schlager, Kevin L. Silverman, Robert K. Hickernell, Richard P. Mirin, Norman A. Sanford, Joseph S. Hayden, Samuel D. Conzone, Robert D. Simpson
We present results for single-frequency and mode-locked Er/Yb co-doped waveguide lasers. The single-frequency DBR waveguide lasers have output power in excess of 80 mW with laser linewidth of 17 kHz. The passively mode-locked waveguide lasers produce