U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Jason Campbell (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 26 - 50 of 116

Towards reliable RRAM performance: macro- and microscopic analysis of operation processes

November 9, 2017
Author(s)
Gennadi Bersuker, Dmitry Veksler, David M. Nminibapiel, Pragya Shrestha, Jason Campbell, Jason Ryan, Helmut Baumgart, Maribeth Mason, Kin P. Cheung
Resistive RAM technology promises superior performance and scalability while employing well- developed fabrication processes. Conductance is strongly affected by structural changes in oxide insulators that make cell switching properties extremely sensitive

Local field effect on charge-capture/emission dynamics

October 30, 2017
Author(s)
Kin P. Cheung, Dmitry Veksler, Jason P. Campbell
Charge-capture/emission is ubiquitous in solid state devices. Its dynamics often play critical roles in device operation and reliability. Treatment of this basic process is found in many text books and is considered well understood. As in many solid state

Impact of RRAM Read Fluctuations on the Program-Verify Approach

May 22, 2017
Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya Shrestha, Jason Campbell, Jason Ryan, Helmut Baumgart, Kin P. Cheung
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify

Cryogenic pulsed I-V measurements on homo- and heterojunction III-V TFETs

April 1, 2017
Author(s)
Quentin Smets, Jihong Kim, Jason Campbell, David M. Nminibapiel, Dmitry Veksler, Pragya Shrestha, Rahul Pandey, Anne S. Verhulst, Eddy Simoens, David J. Gundlach, Curt A. Richter, Kin P. Cheung, Suman Suman, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns
Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi level pinning, and Shockley-Read-Hall (SRH)/trap-assisted tunneling (TAT) generation cause unwanted leakage

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

January 23, 2017
Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Jihong Kim, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
We report on new fluctuation dynamics of the high resistance state of Hafnia-based RRAM devices after RESET. We observe that large amplitude fluctuations occur more frequently immediately after programming and their frequency of occurrence decays in the

Rapid and Accurate C-V Measurements

October 1, 2016
Author(s)
Jihong Kim, Pragya Shrestha, Jason Campbell, Jason Ryan, David M. Nminibapiel, Joseph Kopanski, Kin P. Cheung
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an

Compliance-Free Pulse Forming of Filamentary RRAM

September 30, 2016
Author(s)
Pragya Shrestha, David M. Nminibapiel, Jihong Kim, Helmut Baumgart, Kin (Charles) Cheung, Jason Campbell
Despite the overwhelming effort to improve the efficacy of resistive random access memory (RRAM), the underlying physics governing RRAM operation have proven elusive. A survey of the recent literature almost universally indicates that the remaining glaring

Modeling early breakdown failures of gate oxide in SiC power MOSFETs

July 14, 2016
Author(s)
Zakariae Chbili, Asahiko Matsuda, Jaafar Chbili, Jason T. Ryan, Jason P. Campbell, Mhamed Lahbabi, D. E. Ioannou, Kin P. Cheung
One of the most serious technology roadblocks for SiC DMOSFETs is the significant occurrence of early failures in time-dependent-dielectric-breakdown (TDDB) testing. Conventional screening methods have proved ineffective because the remaining population is

Observation of Strong Reflection of Electron Waves Exiting a Ballistic Channel at Low Energy

June 10, 2016
Author(s)
Jason Campbell, Jason Ryan, Kin P. Cheung, David J. Gundlach, Changze Liu, Canute I. Vaz, Richard G. Southwick III, Anthony S. Oates, Ru Huang
Wave scattering by a potential step is a nearly ubiquitous concept. Thus, it is surprising that theoretical treatments of ballistic transport in nanoscale devices, from quantum point contacts to ballistic transistors, assume no reflection even when the

Device-Level Jitter as a Probe of Ultrafast Traps in High-k MOSFETs

April 16, 2016
Author(s)
Dmitry Veksler, Jason Campbell, Kin (Charles) Cheung, J. Zhong, H. Zhu, C. Zhao
A methodology for evaluation of ultra-fast interfacial traps, using jitter measurements as a probe, is developed. This methodology is applied to study the effect of PBTI stress on density of ultra-fast electron traps (with 500ps to 5ns characteristic

Interface-State Capture Kinetics by Variable Duty Cycle Charge Pumping

April 27, 2015
Author(s)
Asahiko Matsuda, Jason T. Ryan, Jason P. Campbell, Kin P. Cheung
We demonstrated a new variant of the charge-pumping technique featuring varying duty cycle gate pulses to directly probe the interface-state carrier capture process in the time domain. This technique retains the exceptional sensitivity of charge pumping

Electron Spin Resonance Scanning Probe Spectroscopy for Ultra-Sensitive Biochemical Studies

April 22, 2015
Author(s)
Jason P. Campbell, Jason T. Ryan, Pragya R. Shrestha, Zhanglong Liu, Canute I. Vaz, Jihong Kim, Vasileia Georgiou, Kin P. Cheung
Electron spin resonance (ESR) spectroscopy’s affinity for detecting paramagnetic free radicals, or spins, has been increasingly employed to examine a large variety of biochemical interactions. Such paramagnetic species are broadly found in nature and can

Interface-State Capture Cross Section — Why Does It Vary So Much?

April 20, 2015
Author(s)
Jason T. Ryan, Asahiko Matsuda, Jason P. Campbell, Kin P. Cheung
A capture cross section value is often assigned to Si-SiO2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the measurement

Frequency Modulated Charge Pumping with Extremely High Gate Leakage

February 13, 2015
Author(s)
Jason T. Ryan, Jibin Zou, Jason P. Campbell, Richard Southwick, Kin P. Cheung, Anthony Oates, Rue Huang
Charge pumping (CP) has proven itself as one of the most utilitarian methods to quantify defects in metal-oxide-semiconductor devices. In the presence of low to moderate gate leakage, CP quantification is most often implemented via a series of measurements

Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter

December 13, 2014
Author(s)
Guangfan Jiao, Jiwu Lu, Jason Campbell, Jason Ryan, Kin P. Cheung, Chadwin D. Young, Gennadi Bersuker
This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator patterns were

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

November 13, 2014
Author(s)
Jiwu Lu, Canute I. Vaz, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan, Kin P. Cheung, Gennadi Bersuker, Chadwin D. Young
Accurate reliability predictions of real world digital logic circuits rely heavily on the relevancy of device level testing. In the case of bias temperature instability (BTI), where recovery plays a significant role, a leap of faith is taken to translate

Impact of BTI on Random Logic Circuit Critical Timing

October 31, 2014
Author(s)
Kin P. Cheung, Jiwu Lu, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan
Bias temperature instability (BTI) is known to be a serious reliability issue for state-of-the-art Silicon MOSFET technology [1-6]. It is well-known that in addition to a “permanent” degradation, there is a large recoverable degradation component [7] that

Device-Level PBTI-induced Timing Jitter Increase in Circuit-Speed Random Logic Operation

July 31, 2014
Author(s)
Jiwu Lu, Canute I. Vaz, Jason P. Campbell, Jason T. Ryan, Kin P. Cheung, Guangfan Jiao, Gennadi Bersuker, Chadwin D. Young
We utilize eye-diagram measurements of timing jitter to investigate the impact of PBTI in devices subject to DC as well as ring oscillator (RO) and pseudo-random binary sequence (PRBS) stress waveforms. We observe that RO measurements miss the relevant

Accurate Fast Capacitance Measurements for Reliable Device Characterization

July 1, 2014
Author(s)
Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart
As device dimensions continue to scale, transient phenomena are becoming increasingly more important to understand for both performance and reliability considerations. Recently, fast capacitances versus voltage (CV) measurements have been gaining attention

Energy Control Paradigm for Compliance-Free Reliable Operation of RRAM

June 5, 2014
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jihong Kim, Jason P. Campbell, Kin P. Cheung, Shweta Deora, G. Bersuker, Helmut Baumgart
We demonstrate reliable RRAM operation by controlling the forming energy via short voltage pulses (picosecond range) which eliminates the need for a current compliance element. We further show that the dissipated energy during forming and SET/RESET