U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Bryan Barnes (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 26 - 50 of 68

Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression.

November 12, 2015
Author(s)
Mark Alexander Henn, Richard M. Silver, John S. Villarrubia, Nien F. Zhang, Hui Zhou, Bryan M. Barnes, Andras Vladar, Bin Ming
Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimates for

Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization

November 5, 2015
Author(s)
Jing Qin, Richard M. Silver, Bryan M. Barnes, Hui Zhou, Ronald G. Dixson, Mark Alexander Henn
Quantitative optical measurements of deep sub-wavelength, three-dimensional, nanometric structures with sensitivity to sub-nanometer details address an ubiquitous measurement challenge. A Fourier domain normalization approach is used in the Fourier optical

Quantitative tool characterization of a 193 nm scatterfield microscope

September 9, 2015
Author(s)
Martin Y. Sohn, Bryan M. Barnes, Hui Zhou, Richard M. Silver
Optical microscope tool characterization has been investigated for the quantitative measurements of deep sub-wavelength features using a Fourier plane normalization method. The NIST 193 nm scatterfield microscope operating with an ArF Excimer laser, which

Scatterfield Microscopy and the Fundamental Limits of Optical Defect Metrology

April 14, 2015
Author(s)
Richard M. Silver, Bryan M. Barnes, Martin Y. Sohn, Hui Zhou
Defect inspection remains a critical manufacturing challenge due to the competing requirements between throughput and very high resolution. Currently only optical methods provide an acceptable solution, although there are a number of process layers and

Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression

March 19, 2015
Author(s)
Mark Alexander Henn, Richard M. Silver, Nien F. Zhang, Hui Zhou, Bryan M. Barnes, Bin Ming, Andras Vladar, John S. Villarrubia
Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimates for

Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection

February 11, 2015
Author(s)
Bryan M. Barnes, Francois R. Goasmat, Martin Y. Sohn, Hui Zhou, Andras Vladar, Richard M. Silver
Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography

Optimizing Hybrid Metrology through a Consistent Multi-Tool Parameter Set and Uncertainty Model

April 14, 2014
Author(s)
Richard M. Silver, Bryan Barnes, Nien F. Zhang, Hui Zhou, Andras Vladar, John S. Villarrubia, Regis J. Kline, Daniel Sunday, Alok Vaid
There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing measurement throughput (speed) through rigorous combinations of two or more different measurement techniques into a single

Optical volumetric inspection of sub-20 nm patterned defects with wafer noise

April 2, 2014
Author(s)
Bryan M. Barnes, Francois R. Goasmat, Martin Y. Sohn, Hui Zhou, Richard M. Silver, Andras Vladar, Abraham Arceo
We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D

Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy

October 25, 2013
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M. Silver, Abraham Arceo
Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-resolved

Fourier Domain Optical Tool Normalization for Quantitative Parametric Image Reconstruction

September 5, 2013
Author(s)
Jing Qin, Richard M. Silver, Bryan M. Barnes, Hui Zhou, Francois R. Goasmat
There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer scale changes has been observed when measuring critical dimensions

Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection

June 24, 2013
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo
Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity.

3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization

March 25, 2013
Author(s)
Jing Qin, Hui Zhou, Bryan M. Barnes, Ronald G. Dixson, Richard M. Silver
Reduced target dimensions requiring improved resolution and sensitivity have driven the need to use and analyze the phase and scattered frequency information available when using image-based scatterometry systems. One such system is scatterfield microscopy

Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light

April 4, 2012
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo
Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscopy to

Fundamental Limits of Optical Patterned Defect Metrology

November 14, 2011
Author(s)
Richard M. Silver, Bryan Barnes, Martin Sohn, Hui Zhou, Jing Qin
The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has become

A Bayesian Statistical Model for Hybrid Metrology to Improve Measurement Accuracy

July 31, 2011
Author(s)
Richard M. Silver, Nien F. Zhang, Bryan M. Barnes, Jing Qin, Hui Zhou, Ronald G. Dixson
We present a method to combine measurements from different techniques that reduces uncertainties and can improve measurement throughput. The approach directly integrates the measurement analysis of multiple techniques that can include different