January 4, 2008
Author(s)
Savelas A. Rabb, Michael R. Winchester, Lee L. Yu
The Ge atom fractions in SiGe chips with nominal values in the range 3.5 % to 14 % were accurately determined using high performance ICP-OES (HP-ICP-OES). For each chip, Si and Ge were determined in separate HP-ICP-OES experiments, and the Ge atom fraction