Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Oleg Kirillov (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 26 - 40 of 40

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment.

August 27, 2008
Author(s)
Nhan V. Nguyen, Oleg A. Kirillov, Weirong Jiang, Wenyong Wang, John S. Suehle, P. D. Ye, Y. Xuan, N. Goel, Kwang-Woo Choi, Wilman Tsai
In this letter we report the band offsets of the Al/Al2O3/GaAs structure determined by internal photoemission and spectroscopic ellipsometry. The energy barrier height at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 eV, which is

Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

March 8, 2008
Author(s)
David J. Gundlach, James E. Royer, SK Park, Sankar Subramanian, Oana Jurchescu, Behrang H. Hamadani, Andrew Moad, Regis J. Kline, LC Teague, Oleg A. Kirillov, Curt A. Richter, Lee J. Richter, Sean R. Parkin, Thomas Jackson, JE Anthony
The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive

Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.

March 6, 2008
Author(s)
Nhan V. Nguyen, Hao Xiong, John S. Suehle, Oleg A. Kirillov, Eric Vogel, Prashant Majhi, Huang-Chun Wen
Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable metal

Contact Induced Crystallinity for High Performance Soluble Acene-Based TFTs

February 17, 2008
Author(s)
David J. Gundlach, James Royer, Behrang Hamadani, Lucile C. Teague, Andrew J. Moad, Oana Jurchescu, Oleg A. Kirillov, Lee J. Richter, James G. Kushmerick, Curt A. Richter, Sungkyu Park, Thomas Jackson, Sankar Subramanian, John E. Anthony
Organic electronics present a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. However, the lack of low-temperature low-cost deposition and patterning techniques limits the potential for the

Internal Photoemission Spectroscopy of Metal Gate/High-k/ Semiconductor Interfaces

September 30, 2007
Author(s)
Nhan V. Nguyen, Oleg A. Kirillov, Hao Xiong, John S. Suehle
Internal photoemission (IPE) spectroscopy is a powerful technique for investigating electronic properties of inhomogeneous interfaces of hetero-structures. Two most important aspects of IPE measurements involve threshold spectroscopy and photoelectron

The Characterization of Silicon-Based Molecular Devices

September 30, 2007
Author(s)
Nadine Gergel-Hackett, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, Curt A. Richter
In order to realize molecular electronic (ME) technology, an intermediate integration with more traditional silicon-based technologies will likely be required. However, there has been little effort to develop the metrology needed to enable the fabrication

Interface Characterization of Molecular-Monolayer/SiO2 Based Molecular Junctions

August 1, 2006
Author(s)
Curt A. Richter, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, Eric M. Vogel
The properties of monolayers of molecules on thin SiO2 are of great interest for future hybrid Si-molecular device technologies. We present here a correlation of the results of dc-current-voltage (IV) and capacitance-voltage (CV) measurements with

Interface Characterization of Molecular-Monolayer/SiO2 Based Molecular Junctions

April 19, 2006
Author(s)
Curt A. Richter, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, John S. Suehle, Eric M. Vogel
We present a correlation of the results of dc-current-voltage (IV) and ac-capacitance-voltage (CV) measurements with vibrational spectroscopy of Au/monolayer/SiO2/Si structures to establish an improved understanding of the interactions at the buried metal/

Variations in Semiconducting Polymer Microstructure and Hole Mobility With Spin-Coating Speed

November 15, 2005
Author(s)
Dean M. DeLongchamp, Brandon M. Vogel, Youngsuk Jung, Curt A. Richter, Oleg A. Kirillov, Jan Obrzut, Daniel A. Fischer, S Sambasivan, Marc Gurau, Lee J. Richter, Eric K. Lin
Organic semiconductors permit low-cost processing methods such as spin-coating, dip coating, or ink-jet printing onto flexible substrates. However, the performance of these materials in devices is difficult to control and new processing methods can deliver