U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: James E. Maslar (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 26 - 50 of 70

Raman spectroscopic observation of dehydrogenation in ball-milled LiNH2-LiBH4-MgH2 nanoparticles

April 3, 2010
Author(s)
Jason Hattrick-Simpers, Chun Chiu, James E. Maslar, Leonid A. Bendersky, Michael E. Niemann, Sesha S. Srinivasan, Elias K. Stefanakos
In situ Raman spectroscopy was used to monitor the dehydrogenation of ball-milled mixtures of LiNH2 LiBH4 MgH2 nanoparticles. The as-milled powders were found to contain a mixture of Li4BN3H10 and Mg(NH2)2, with no evidence of residual LiNH2 or LiBH4. It

Raman Spectroscopic Determination of Electron Concentration in n-Type GaSb

November 19, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength permits

Raman Spectroscopic Determination of Hole Concentration in p-Type GaSb

January 2, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
Room temperature p-type GaSb bulk coupled mode spectra were measured as a function hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode

In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition

January 1, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, Donald R. Burgess Jr., William A. Kimes, Nhan V. Nguyen, Elizabeth F. Moore, Joseph T. Hodges
Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high  dielectric layers required for many nanoelectronics applications. In situ monitoring of ALD processes has the potential to yield insights that will

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Using Group VIII Metal Catalysts

November 13, 2007
Author(s)
Siddarth Sundaresan, Albert Davydov, Mark D. Vaudin, Igor Levin, James E. Maslar, Yong-lai Tian, M V. Rao
SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich (SS) method. This involves microwave heating-assisted physical vapor transport from a source 4H-SiC wafer to a closely positioned substrate 4H-SiC wafer. The substrate wafer is

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

October 1, 2007
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is important to

Tunable Ionic-Conductivity of Collapsed Sandia Octahedral Molecular Sieves (SOMS)

September 12, 2007
Author(s)
Jason D. Pless, Terry J. Garino, James E. Maslar, Tina M. Nenoff
The structure-property relationship between atomic cation substitution and bulk scale conductivity in perovskites has been studied systematically. A series of Na-Nb perovskites has been synthesized via two methods (1) ion-exchange or (2) synthetic metal

Local Structures and Raman Spectra in the Ca(Zr,Ti)O 3 Perovskite Solid Solutions

February 7, 2006
Author(s)
Igor Levin, Eric J. Cockayne, M W. Lufaso, Joseph C. Woicik, James E. Maslar
Local structures and cation distributions in perovskite Ca(Zr, Ti)O3 solid solutions were analyzed using X-ray absorption fine structure and pair-distribution functions obtained from total neutron scattering. The analyses revealed that the Zr-O and Ti-O

First-Order Raman Spectra of AB' 1/2 B'' 1/2 O 3 Double Perovskites

June 1, 2005
Author(s)
S A. Prosandeev, U Waghmare, Igor Levin, James E. Maslar
First principles computations of Raman intensities were performed for perovskite-like compound CaAl1/2Nb1/2O3 (CAN). This compound features 1:1 (NaCl-type) ordering of Al and Nb superimposed onto the b-b-c+ octahedral tilting. Raman tensor for CAN was

Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

May 9, 2005
Author(s)
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric function is

Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy

October 4, 2004
Author(s)
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of Silicon-On-Insulator fabricated by a wafer bonding technique was examined by spectroscopic ellipsometry and Raman spectroscopy. The detailed modeling of the experimental ellipsometric data yields information about structural

Non-Contact Determination of Free Carrier Concentration in n-GaInAsSb

January 1, 2004
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang, D A. Shiau
GaSb-based semiconductors are of interest for mid-infrared optoelectronic and high-speed electronic devices. Accurate determination of electrical properties is essential for optimizing the performance of these devices. However, electrical characterization