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Displaying 26 - 50 of 106

Comparing the Transient Response of a Resistive-Type Sensor With a Thin Film Thermocouple During the Post-Exposure Bake Process

April 1, 2004
Author(s)
Kenneth G. Kreider, D P. DeWitt, J B. Fowler, J E. Proctor, William A. Kimes, Dean C. Ripple, Benjamin K. Tsai
Recent studies on dynamic temperature profiling and lithographic performance modeling of the post-exposure bake (PEB) process have demonstrated that the rate of heating and cooling may have an important influence on resist lithographic response. Generally

Heat-Flux Sensor Calibration

January 1, 2004
Author(s)
Benjamin K. Tsai, Charles E. Gibson, M V. Annageri, D P. DeWitt, Robert D. Saunders

Calibration of Radiation Thermometers in Rapid Thermal Processing Tools Using Si Wafers with Thin Film Thermocouples

October 1, 2003
Author(s)
Kenneth G. Kreider, William A. Kimes, Christopher W. Meyer, Dean C. Ripple, Benjamin K. Tsai, D H. Chen, D P. DeWitt
Rapid thermal processing (RTP) tools are currently monitored and controlled with lightpipe radiation thermometers (LPRTs) which have been calibrated with thermocouple instrumented wafers. We have developed a thin-film thermocouple wafer that enables more

Effects of Lightpipe Proximity on Si Wafer Temperature in Rapid Thermal Processing Tools

September 1, 2003
Author(s)
Kenneth G. Kreider, D H. Chen, D P. DeWitt, William A. Kimes, Benjamin K. Tsai
curate temperature measurements are critical in rapid thermal processing (RTP) of silicon wafers for thermal oxidation and dopant anneals. Many RTP tools use lightpipe radiation thermometers (LPRTs) to measure the wafer temperatures during processing

Effects of Lightpipe Proximity on Si Wafer Temperature in Rapid Thermal Processing Tools

September 1, 2003
Author(s)
Kenneth G. Kreider, D H. Chen, D P. DeWitt, William A. Kimes, Benjamin K. Tsai
Lightpipe radiation thermometers (LPRTs) are the preferred temperature monitoring sensor in most rapid thermal processing (RTP) tools for semiconductor fabrication. These tools are used for dopant anneal, gate oxide formation, and other high temperature

Temperature and Flux Scales for Heat-Flux Sensor Calibration

September 1, 2003
Author(s)
A V. Murthy, D P. DeWitt, Benjamin K. Tsai, Gerald T. Fraser, Robert D. Saunders
Methodologies for calibrating heat-flux sensors designed for direct measurement of heat-transfer at a surface are presented. These sensors, extensively used in fire-test methods and aerospace applications, vary in range from a few kW/m 2 to in excess of

Effects of Wafer Emissivity on Rapid Thermal Processing Temperature Measurement

September 1, 2002
Author(s)
D H. Chen, D P. DeWitt, Benjamin K. Tsai, Kenneth G. Kreider, William A. Kimes
Lightpipe radiation thermometers (LPRTs) are widely used to measure wafer temperatures in rapid thermal processing (RTP) tools. Using blackbody-calibrated LPRTs to infer the wafer temperature, it is necessary to build a model to predict the effective

Wafer Emissivity Effects on Light Pipe Radiometry in RTP Tools

May 1, 2002
Author(s)
Kenneth G. Kreider, David W. Allen, D H. Chen, D P. DeWitt, Christopher W. Meyer, Benjamin K. Tsai
We investigated the effect of different wafer emissivities and the effect of low emissivity films on RTP wafer temperature measurements using light pipe radiation thermometers (LPRTs). These tests were performed in the NIST RTP test bed. We used a NIST

Calibration of a Heat Flux Sensor Up to 200 kW/m 2 in a Spherical Blackbody Cavity

January 1, 2002
Author(s)
A V. Murthy, Benjamin K. Tsai, Robert D. Saunders
This paper presents the results of a comparative study of narrow view-angle and wide view-angle calibrations of a water-cooled Schmidt-Boelter heat-flux sensor. The narrow view-angle calibration, up to a heat flux level of 50 kW/m2, was conducted using the