March 1, 2006
Author(s)
Kristopher Lavery, George Thompson, Hai Deng, D S. Fryer, Kwang-Woo Choi, B D. Vogt, Vivek Prabhu, Eric K. Lin, Wen-Li Wu, Sushil K. Satija, Michael Leeson, Heidi B. Cao
More demanding requirements are being made of photoresist materials for fabrication of nanostructures as the feature critical dimensions (CD) decrease. For EUV resists, control of line width roughness (LWR) and high resist sensitivity are key requirements