Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Wen-Li Wu (Assoc)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 51 - 75 of 193

Line Edge Roughness Characterization of Sub-50nm Structures Using CD-SAXS: Round-Robin Benchmark Results

January 1, 2007
Author(s)
Chengqing C. Wang, J C. Roberts, Robert Bristol, B Bunday, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, John S. Villarrubia, Kwang-Woo Choi, James S. Clarke, Bryan J. Rice, Michael Leeson
he need to characterize line edge and line width roughness in patterns with sub-50 nm critical dimension challenges existing platforms based on electron microscopy and optical scatterometry. The development of x-ray based metrology platforms provides a

Evidence for Internal Stresses Induced by Nanoimprint Lithography

November 30, 2006
Author(s)
Hyun Wook Ro, Yifu Ding, Hae-Jeong Lee, Daniel R. Hines, Ronald L. Jones, Eric K. Lin, Alamgir Karim, Wen-Li Wu, Christopher L. Soles
The thermal embossing form of nanoimprint lithography is used to pattern arrays of nanostructures into several different polymer films. The shape of the imprinted patterns is characterized with nm precision using both X-ray scattering and reflectivity

The Effect of Deprotection Extent on Swelling and Dissolution Regimes of Thin Polymer Films

October 28, 2006
Author(s)
Ashwin Rao, Shuhui Kang, B D. Vogt, Vivek M. Prabhu, Eric K. Lin, Wen-Li Wu, M Muthukumar
The response of unentangled polymer thin films to aqueous hydroxide solutions is measured as a function of increasing weakly-acidic methacrylic acid comonomer content produced by an in-situ reaction-diffusion process. Quartz crystal microbalance with

Structural Characteristics of Methylsilsesquioxane Based Porous Low-k Thin Films Fabricated with Increasing Cross-Linked Particle Porogen Loading

September 1, 2006
Author(s)
Hae-Jeong Lee, Christopher L. Soles, Da-Wei Liu, Barry J. Bauer, Eric K. Lin, Wen-Li Wu
Methylsilsesquioxane (MSQ) based porous low-k dielectric films with different porogen loading have been characterized using X-ray porosimetry (XRP) to determine their pore size distribution, average density, wall density and porosity. By varying the

Deprotection Kinetics in 193 nm Photoresist Thin Films: Influence of Copolymer Content

July 25, 2006
Author(s)
Shuhui Kang, Vivek M. Prabhu, B D. Vogt, Eric K. Lin, Wen-Li Wu, Karen Turnquest
The reaction-diffusion mechanism of photoacids is dependent upon many variables including the reaction rate, size of the acid counterion species and temperature. Recent experiments have demonstrated the acid diffusion can be controlled by a combination of

Fundamentals of the Reaction-Diffusion Process in Model EUV Photoresists

March 1, 2006
Author(s)
Kristopher Lavery, George Thompson, Hai Deng, D S. Fryer, Kwang-Woo Choi, B D. Vogt, Vivek Prabhu, Eric K. Lin, Wen-Li Wu, Sushil K. Satija, Michael Leeson, Heidi B. Cao
More demanding requirements are being made of photoresist materials for fabrication of nanostructures as the feature critical dimensions (CD) decrease. For EUV resists, control of line width roughness (LWR) and high resist sensitivity are key requirements

Dissolution Fundamentals of 193-nm Methacrylate Based Photoresists

February 19, 2006
Author(s)
Ashwin Rao, Shuhui Kang, B D. Vogt, Vivek Prabhu, Eric K. Lin, Wen-Li Wu, Karen Turnquest, W D. Hinsberg
The dissolution of partially deprotected chemically amplified photoresists is the final step in printing lithographic features. Since this process step can be tuned independently from the design of the photoresist chemistry, fundamental measurements of the

Effect of Initial Resist Thickness on Residual Layer Thickness of Nanoimprinted Structures

December 1, 2005
Author(s)
Hae-Jeong Lee, Hyun Wook Ro, Christopher L. Soles, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, Daniel R. Hines
Accurate quantification and control of the residual layer thickness is a critical challenge to achieving sub-50 nm patterning with nanoimprint lithography. While characterization to within a few nanometers is essential, there is currently a lack of

Acoustic Modes and Elastic Properties of Polymeric Nanostructures

October 21, 2005
Author(s)
R Hartschuh, A Kisliuk, V N. Novikov, Alexei Sokolov, Paul R. Heyliger, Colm Flannery, Ward L. Johnson, Christopher Soles, Wen-Li Wu
Fabricating mechanically robust polymer structures with nanoscale dimensions is critical for a wide range of emerging technologies. The rigidity of such structures is expected to change as the feature sizes approach the characteristic dimensions of the

Direct Measurement of the Counterion Distribution Within Swollen Polyelectrolyte Films

July 19, 2005
Author(s)
Vivek M. Prabhu, B D. Vogt, Wen-Li Wu, Eric K. Lin, Jack F. Douglas, Sushil K. Satija, D L. Goldfarb, H Ito
The depth profile of the counterion concentration within thin polyelectrolyte films was measured in situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution.Wefind substantial counterion

Direct Measurement of the Counterion Distribution Within Swollen Polyelectrolyte Films

May 20, 2005
Author(s)
Vivek M. Prabhu, B D. Vogt, Wen-Li Wu, Jack F. Douglas, Eric K. Lin, Sushil K. Satija, D M. Goldfarb, H Ito
A depth profile of the counterion concentration within thin polyelectrolyte films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion

Characterization of Ordered Mesoporous Silica Films Using Small-Angle Neutron Scattering and X Ray Porosimetry

March 1, 2005
Author(s)
B D. Vogt, R A. Pai, V. J. Lee, R C. Hedden, Christopher L. Soles, Wen-Li Wu, Eric K. Lin, Barry J. Bauer, J J. Watkins
Ordered mesoporous silica films were synthesized using pre-organized block copolymer templates in supercritical carbon dioxide. Poly(ethylene oxide-block-propylene oxide-block-ethylene oxide), PEO-bPPO-b-PEO,films doped with p-toluenesulfonic acid (p-TSA)

Interfacial Structure of Photoresist Thin Films in Developer Solutions

March 1, 2005
Author(s)
Vivek M. Prabhu, B D. Vogt, Wen-Li Wu, Jack F. Douglas, Sushil K. Satija, D M. Goldfarb, H Ito
The development step is critical to the fabrication of nanostructures in chemically amplified photoresist technology. With critical dimensions (CD) shrinking to sub-100 nm and the concurrent reduction in exposure radiation wavelength, line-edge roughness

X-ray Absorption Spectroscopy to Probe Surface Composition and Surface Deprotection in Photoresist Films

March 1, 2005
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer, S Sambasivan, Eric K. Lin, Ronald L. Jones, Christopher Soles, Wen-Li Wu, D M. Goldfarb, M Angelopoulos
We utilize near edge x-ray absorption fine structure spectroscopy (NEXAFS) to provide chemical insight into surface chemical effects in model photo-resist films. First, NEXAFS was used to examine the resist/air interface including surface segregration of a

Characterization of Ordered Mesoporous Silica Films Using Small Angle Neutron Scattering and X-Ray Porosimetry

February 23, 2005
Author(s)
B D. Vogt, R A. Pai, Hae-Jeong Lee, R C. Hedden, Christopher L. Soles, Wen-Li Wu, Eric K. Lin, Barry J. Bauer, J J. Watkins
Ordered mesoporous silica films were synthesized using pre-organized block copolymer templates in supercritical carbon dioxide. Poly(ethylene oxide-block-propylene oxide-block-ethylene oxide), PEO-b-PPO-b-PEO, films doped with p-toluenesulfonic acid (p TSA

Water Distribution Within Immersed Polymer Films

February 1, 2005
Author(s)
B D. Vogt, Christopher Soles, Vivek Prabhu, Sushil K. Satija, Eric K. Lin, Wen-Li Wu
The emergence of immersion lithography as a potential alternative for the extension of current lithography tools will require a fundamental understanding of the interactions between the photoresist and the immersion liquid such as water. The water