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Search Publications by: Joseph Woicik (Fed)

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Displaying 26 - 50 of 109

X-ray spectroscopic and first principles investigation of lead tungstate under pressure

August 26, 2021
Author(s)
Eric L. Shirley, Eric J. Cockayne, Joseph Woicik, James M. Ablett
High-energy-resolution fluorescence-detected (HERFD) near-edge x-ray absorption fine structure measurements performed at the Pb and W L3 absorption edges has been used to study the pressure dependence of the local atomic structure of PbWO4 from 0 GPa to 22

Betraying excitonic processes and chemical bonding in MoS2 by x-ray-absorption near-edge structure and resonant-Auger electron emission

March 10, 2021
Author(s)
Joseph Woicik, Nicholas F. Quackenbush, Conan Weiland, Eric L. Shirley, Abdul K. Rumaiz, Michael T. Brumbach, James M. Ablett
Electron core-hole processes at absorption edges sport several signatures, primarily in the form of bound states and/or excitonic enhancement. Through analysis of the resonant-Raman Auger effect for the 2-dimensional transition-metal dichalcogenide MoS2

Charge-transfer satellites in the photoemission and x-ray absorption spectra of SrTiO3 and TiO2: Experiment and first-principles theory

March 10, 2021
Author(s)
Eric L. Shirley, Joseph Woicik, Cherno Jaye, Daniel A. Fischer, Abdul K. Rumaiz, Joshua J. Kas, John J. Rehr, Conan Weiland
Complete ab initio real-time cumulant and Bethe-Salpeter-equation calculations accurately capture the detailed satellite structure observed in both the photoemission and x-ray absorption spectra of the transition-metal compounds SrTiO3 and TiO2. Real-space

Core-hole processes in photoemission and x-ray absorption by resonant-Auger electron spectroscopy and first-principles theory

March 10, 2021
Author(s)
Eric L. Shirley, Joseph Woicik, Conan Weiland, James M. Ablett, Abdul K. Rumaiz, Michael T. Brumbach, Joshua J. Kas, John J. Rehr
The electron-core-hole interaction is critical for proper interpretation of core-level spectroscopies commonly used as structural tools in materials' science. Resonant Auger- electron spectroscopy can uniquely identify exciton, shake, and charge-transfer

Local structural distortions in strained BaSrTiO3 thin films

September 28, 2017
Author(s)
Joseph C. Woicik, Eric L. Shirley, Keith Gilmore, K E. Andersen, C S. Hellberg
The local atomic structures in Ba0.5Sr0.5TiO3 thin films grown on MgO(001) substrates have been determined by density functional theory calculations and Ti K-edge x-ray absorption fine-structure measurements. Films with either c > a or c

Angular-Momentum Resolved Partial Density of States of Rutile TiO 2 : Theory and Experiment

February 19, 2017
Author(s)
Joseph Woicik, E J. Nelson, L Kronik, M Jain, J R. Chelikowsky, D Heskett, L E. Berman, G S. Herman
Using the method of site-specific valence x-ray photoelectron spectroscopy (SSVKPS), we have experimentally determined the Ti and O partial density of occupied valence states of rutile TiO2. Excellent agreement with ab initio local density approximation

Anomalous Lattice Expansion of Coherently Strained SrTiO 3 Thin Films Grown on Si(001) by Kinetically Controlled Sequential Deposition

February 19, 2017
Author(s)
Joseph Woicik, H Li, P Zschack, E Karapetrova, P Ryan, C R. Ashman, C S. Hellberg
X-ray diffraction has been used to study the epitaxy and lattice expansion of SrTiO3 thin films grown on Si(001) by kinetically controlled sequential deposition (KCSD). Unlike films grown by traditional molecular beam epitaxy (MBE), these films have an in

Phase-Correct Bond Lengths in Crystalline-Ge x Si l-x Alloys

February 19, 2017
Author(s)
Joseph Woicik, K E. Miyano, C A. King, R W. Johnson, J G. Pellegrino, T L. Lee, Z H. Lu
Extended x-ray absorption fine structure performed at the Ge-K edge has determined the Ge-Ge and Ge-Si bond lengths in a series of crystalline-Ge l-x alloys (x [greater than/less than] 0.5) to be compositional dependent. This high-precision measurement was

X-Ray Absorption Fine-Structure Determination of Ferroelectric Distortion in SrtiO 3 Thin Films grown on Si(001)

February 19, 2017
Author(s)
Joseph Woicik, F S. Aguirre-Tostado, A Herrera-Gomez, R Droopad, Z Yu, D G. Schlom, E Karapetrova, P Zschack, P Pianetta
Polarization-dependent x-ray absorption fine structure together with x-ray diffraction have been used to study the local structure in SrTiO 3 thin films grown on Si(001). Our data indicate that below a critical thickness of approximately 80 , the in-plane

Crystal Structure of the Type I Clathrate Ba8Ni4Ge42

March 30, 2012
Author(s)
Winnie K. Wong-Ng, Qingzhen Huang, Igor Levin, Joseph C. Woicik, Xun Shi, Jihui Yang, James A. Kaduk
The crystal structure of Type-I clathrate Ba8Ni4Ge42 has been determined using neutron powder diffraction, transmission electron microscopy (TEM, for possible superlattice), extended X-ray absorption fine structure measurements. Ba8Ni4Ge42 is cubic with

Deactivation of Sub-Melt Laser Annealed Arsenic Ultra Shallow Junctions in Silicon During Subsequent Thermal Treatment

May 4, 2010
Author(s)
Joseph C. Woicik, D. Giubertoni, G. Pepponi, S. Gennaro, M. Bersani, M. A. Sahiner, S. P. Kelty, M. Kah, K. J. Kirkby, R. Doherty, M. A. Foad, F. Meirer, C. Streli, P. Pianetta
The use of non-equilibrium annealing approaches can produce a very high level of arsenic electrical activation in Si but subsequent thermal treatments between 500 and 800 C easily deactivate the dopant to a level one order of magnitude below the solid

A Combined Fit of Total Scattering and Extended X-ray Absorption Fine Structure Data for Local-Structure Determination in Crystalline Materials

October 5, 2009
Author(s)
Igor Levin, Victor L. Krayzman, Joseph C. Woicik, Terrell A. Vanderah, M. G. Tucker, Thomas Proffen
Reverse Monte Carlo (RMC) refinements of local structure using a simultaneous fit of x-ray/neutron total scattering and EXAFS data were developed to incorporate an explicit treatment of both single- and multiple-scattering contributions to EXAFS. The

A Ferroelectric Oxide Directly on Silicon

April 17, 2009
Author(s)
Joseph C. Woicik, Maitri P. Warusawithana, Cheng Cen, Charles R. Sleasman, Yulan Li, Jeffery Kluga, Lena F. Kourkoutis, Hao Li, Li-Peng Wang, Michael Bedzyk, David A. Muller, Long-Qing Chen, Jeremy Levy, Darrell G. Schlom
Silicon and silicon dioxide form what is arguably the most important technological interface. With the end of Moore s-law scaling for silicon fast approaching, alternatives to silicon dioxide are being pursued that may enable new device architectures and

Structural Changes behind the Diffuse Dielectric Response in AgNbO3

March 13, 2009
Author(s)
Igor Levin, Victor L. Krayzman, Joseph C. Woicik, J. Karapetrova, T. Proffen, M. G. Tucker, I. M. Reaney
Structural changes among the so-called M-polymorphs of AgNbO3 were analyzed using combined high-resolution X-ray diffraction, neutron total scattering, electron diffraction, and X-ray absorption fine structure measurements. These polymorphs crystallize

Correlation of Local Structure and Electrical Activation in Arsenic Ultra Shallow Junctions in Silicon

November 5, 2008
Author(s)
D. Giubertoni, Giancarlo Pepponi, Salvatore Gennaro, Massimo Bersani, M A. Sahiner, Stephen P. Kelty, Roisin Doherty, Majeed A. Foad, Max Kah, Karen J. Kirkby, Joseph Woicik
The understanding of the behavior of arsenic in highly doped near surface silicon layers is of crucial importance for the formation of N-type Ultra Shallow Junctions in current and future VLSI technology. This is of peculiar relevance when studying novel