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Displaying 1 - 25 of 61

Parametric uncertainty in nanoscale optical dimensional measurements

June 10, 2012
Author(s)
James E. Potzick, Egon Marx
Image modeling establishes the relation between an object and its image when an optical microscope is used to measure the dimensions of an object of size comparable to the illumination wavelength. It accounts for the influence of all of the parameters

TSOM Method for Semiconductor Metrology

April 18, 2011
Author(s)
Ravikiran Attota, Ronald G. Dixson, John A. Kramar, James E. Potzick, Andras Vladar, Benjamin D. Bunday, Erik Novak, Andrew C. Rudack
Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement resolution using conventional optical microscopes; measurement sensitivities are comparable to what is typical using Scatterometry, SEM and

Results of an international photomask linewidth comparison of NIST and PTB

October 9, 2009
Author(s)
Bernd Bodermann, Detleff Bergmann, Egbert Buhr, Wolfgang Haebler-Grohne, Harald Bosse, James E. Potzick, Ronald G. Dixson, Richard Quintanilha, Michael T. Stocker, Andras Vladar, Ndubuisi George Orji
In preparation of the international Nano1 linewidth comparison on photomasks between 9 national metrology institutes, NIST and PTB have started a bilateral linewidth comparison in 2008, independent of and prior to the Nano1 comparison in order to test the

Photomask metrology using a 193 nm scatterfield microscope

September 30, 2009
Author(s)
Richard Quintanilha, Bryan M. Barnes, Martin Y. Sohn, Lowell P. Howard, Richard M. Silver, James E. Potzick, Michael T. Stocker
The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been usually

Comparison of Measurement Techniques for Linewidth Metrology on Advanced Photomasks

February 19, 2009
Author(s)
Stewart Smith, Andreas Tsiamis, Martin McCallum, Andrew Hourd, J Stevenson, Anthony Walton, Ronald G. Dixson, Richard A. Allen, James E. Potzick, Michael W. Cresswell, Ndubuisi George Orji
This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD)made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above three

2nd Annual Tri-National Workshop on Standards for Nanotechnology - (NIST presentations)

December 10, 2008
Author(s)
Ronald G. Dixson, Jon R. Pratt, Vincent A. Hackley, James E. Potzick, Richard A. Allen, Ndubuisi G. Orji, Michael T. Postek, Herbert S. Bennett, Theodore V. Vorburger, Jeffrey A. Fagan, Robert L. Watters
A new era of cooperation between North American National Measurement Institutes (NMIs) was ushered by the National Research Council of Canada Institute for National Measurement Standards (NRC-INMS) on February 7, 2007 when the first Tri-National workshop

Computational Parameters in Simulation of Microscope Images

November 28, 2008
Author(s)
Egon Marx, James E. Potzick
The simulation of microscope images computed from scattered fields determined using integral equations depend on a number of parameters that are not related to the scatterer or to the microscope but are choices made for the computation method. The effect

International photomask linewidth comparison by NIST and PTB

October 17, 2008
Author(s)
James E. Potzick, Ronald G. Dixson, Richard Quintanilha, Michael T. Stocker, Andras Vladar, Egbert Buhr, Bernd Bodermann, Wolfgang Hassler-Grohne, Harald Bosse, C.G. Frase
In preparation of the international Nano1 linewidth comparison on photomasks between 8 national metrology institutes, NIST and PTB have started a bilateral linewidth comparison in 2008, independent of and prior to the Nano1 comparison in order to test the

Photomask Applications of Traceable Atomic Force Microscope Dimensional Metrology at NIST

October 1, 2007
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, James E. Potzick, Joseph Fu, Michael W. Cresswell, Richard A. Allen, S J. Smith, Anthony J. Walton
The National Institute of Standards and Technology (NIST) has a multifaceted program in AFM dimensional metrology. Two major instruments are being used for traceable measurements. The first is a custom in-house metrology AFM, called the calibrated AFM (C

Accuracy in Optical Image Modeling

February 26, 2007
Author(s)
James E. Potzick, Egon Marx, M P. Davidson
Wafer exposure process simulation and optical photomask feature metrology both rely on optical image modeling for accurate results. The best way to gauge the accuracy of an imaging model is to compare the model results with an actual image. Modeling

Parametric Uncertainty in Optical Image Modeling

September 18, 2006
Author(s)
James E. Potzick, Egon Marx, M P. Davidson
Optical photomask feature metrology and wafer exposure process simulation both rely on optical image modeling for accurate results. While it is fair to question the accuracies of the available models, model results also depend on several input parameters

A Benefit/Cost Model for Metrology in Manufacturing

October 24, 2005
Author(s)
James E. Potzick
Every measurement of a feature's size or placement on a wafer or photomask is made for a reason. Usually a measurement leads to a decision, often involving a process adjustment or business transaction, and there are costs and benefits attached to these

Photomask Feature Metrology

April 7, 2005
Author(s)
James E. Potzick
This chapter discusses some general issues with regard to measurement of the size and placement of the features on a photomask.
Since all linewidth and placement measurements derive from the location of a feature's edges, the Chapter starts with a

Improving the Uncertainty of Photomask Linewidth Measurements

May 1, 2004
Author(s)
J Pedulla, James E. Potzick, Richard M. Silver
The National Institute of Standards and Technology (NIST) is currently developing a photomask linewidth standard (SRM 2059) with a lower expected uncertainty of calibration than the previous NIST standards (SRMs 473, 475, 476). In calibrating these

Optical Photomask CD Metrology at NIST

November 1, 2003
Author(s)
James E. Potzick
Our customers usually measure mask features in order to make a business decision, such as whether or not to ship a mask to a customer. A simple cost/benefit model for mask CD metrology shows there is an optimum measurement uncertainty which will maximize

Updated NIST Photomask Linewidth Standard

May 1, 2003
Author(s)
J Pedulla, James E. Potzick, Michael T. Stocker
NIST is preparing to issue the next generation in its line of binary photomask linewidth standards. Called SRM 2059, it was developed for calibrating microscopes used to measure linewidths on photomasks, and consists of antireflecting chrome line and space

Updated NIST Photomask Linewidth Standard

January 1, 2003
Author(s)
James E. Potzick, J Pedulla, Michael T. Stocker
NIST is preparing to issue the next generation in its line of binary photomask linewidth standards. Called SRM 2059, it was developed for calibrating microscopes used to measure linewidths on photomasks, and consists of antireflecting chrome line and space

New NIST Photomask Linewidth Standard

December 1, 2002
Author(s)
James E. Potzick, J Pedulla, Michael T. Stocker
NIST is preparing to issue the next generation in its line of binary photomask linewidth standards. Called SRM 2059, it was developed for calibrating microscopes used to measure linewidths on photomasks, and consists of antireflecting chrome line and space

Problem with Submicrometer-linewidth Standards and A Possible Solution

August 1, 2001
Author(s)
James E. Potzick
Traceable linewidth measurements of tiny features on photomasks and wafers present interesting challenges. Usually technical solutions exist for the problems encountered, but traceability can be costly in time and labor. A measurement is useful only if its

Problem With Submicrometer-Linewidth Standards and a Proposed Solution

August 1, 2001
Author(s)
James E. Potzick
Traceable linewidth measurements of tiny features on photomasks and wafers present interesting challenges. Usually technical solutions exist for the problems encountered, but traceability can be costly in time and labor. A measurement is useful only if its