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Search Publications by: Herbert S. Bennett (Assoc)

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Displaying 26 - 50 of 82

ISCD-NIST DXA Survey: Preliminary Report

May 15, 2008
Author(s)
Andrew M. Dienstfrey, Tammy L. Oreskovic, Lawrence T. Hudson, Herbert S. Bennett
This article reports and discusses briefly the preliminary results from the recent International Society for Clinical Densitometry (ISCD)-National Institute of Standards and Technology (NIST) dual-energy x-ray absorptiometry (DXA) Survey. The 1074 Survey

Extracting Electron Densities in N-Type GaAs from Raman Spectra: Theory

July 1, 2007
Author(s)
Herbert S. Bennett
Raman measurements are proposed as a non-destructive method for wafer acceptance tests of carrier density. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort

Will Future Measurement Needs for the Semiconductor Industry Be Met?

January 1, 2007
Author(s)
Herbert S. Bennett, Alain C. Diebold, C. M. Garner
We present an assessment of the state of the nation''s measurement system in its ability to meet the metrology needs of the semiconductor industry. Lacking an acceptable metric for the assessing the health of metrology for the semiconductor industry, we

Standards and Measurements for Assessing Bone Health

December 1, 2006
Author(s)
Herbert S. Bennett, Andrew Dienstfrey, Thomas Fuerst, Lawrence T. Hudson, Tammy L. Oreskovic, John Shepherd
This paper reports and discusses the results of the recent ISCD-NIST USMS Workshop on Standards and Measurements for Assessing Bone Health. The purpose of the Workshop was to assess the status of efforts to standardize and compare results from dual-energy

Future Perspective of RF and Analog/Mixed-Signal Integrated Circuit Technologies for Mobile Communications

October 23, 2006
Author(s)
Bin Zhao, Herbert S. Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Margaret Huang, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel
Radio frequency (RF) and analog/mixed-signal (AMS) integrated circuits (ICs) are key enabling components for mobile and wireless communications and their advancements continue to drive the growth of the related semiconductor market. The circuit and

RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective

October 10, 2006
Author(s)
Margaret Huang, Herbert S. Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao
The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V

Device and Technology Evolution for Si-Based RF Integrated Circuits

July 1, 2005
Author(s)
Herbert S. Bennett, Ralf Brederlow, Julio Costa, Peter Cottrell, Margaret Huang, Anthony A. Immorlica, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel, Bin Zhao
The relationships between device feature size and device performance figures of merit (FoMs) are more complex for RF applications than for digital applications. Using the devices in the key circuit blocks for typical RF transceivers, we review and give

Radio-frequency and Analog/Mixed-signal Circuits and Devices for Wireless Communications

November 30, 2004
Author(s)
Herbert S. Bennett, Ralf Brederlow, Julio Costa, Margaret Huang, Anthony A. Immorlica, Jan-Erik Mueller, Marco Racanelli, Charles E. Weitzel, Bin Zhao
Wireless communications have evolved from the traditional radio and TV broadcasting to a broad spectrum of exciting applications in bi-directional and interactive wireless communications such as cellular system/phones, smart handheld devices, wireless

What is the Future for Technology Roadmaps on Optoelectronics Packaging

October 11, 2003
Author(s)
Herbert S. Bennett
Reasons for why you should become more involved with technology roadmaps for optoelectronics packaging are given. Unlike the silicon CMOS (complementary metal-oxide semiconductor) industry, the optoelectronics packaging industry does not have an

Dependence of Electron Density on Fermi Energy in N-type Gallium Antimonide

May 1, 2003
Author(s)
Herbert S. Bennett, Howard Hung
The majority electron density as a function of the Fermi energy is calculated in zinc Blende, n-type GaSb for donor densities between 10 16 cm -3 and 10 19 cm -3. These calculations solve the charge neutrality equation self-consistently for a four-band

Do We Need a Roadmap?

April 1, 1999
Author(s)
Herbert S. Bennett, Joseph G. Pellegrino, D. L. Rode, Thomas J. Shaffner, David G. Seiler