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Displaying 26 - 50 of 1280

Ferroics: Magnetic-Compass Lattice and Optical Phonon Dispersions of Dipolar Crystals

October 12, 2021
Author(s)
Takeshi Nishimatsu, U Waghmare, Yoshiyuki Kawazoe, Benjamin P. Burton, Kazutaka Nagao, N. Saito
We report a simple safe and attractive pedagogic demonstration with magnetic compasses that facilitates an intuitive understanding of the concept that ferromagnetism and ferroelectricity do not result from dipole-dipole interactions alone. Phonon

Homological Metrics for Microstructure Response Fields in Polycrystals

October 12, 2021
Author(s)
Lin-Sien H. Lum, D M. Saylor, Thomas Wanner
Quantitative homological metrics are proposed for characterizing the thermal-elastic response of calcite-based polycrystals. The characterization is based on topological measurements, such as the number of components and the number of handles of a complex

Large Negative Poisson's Ratio for SrTiO3 Thin Films Grown on Si(001

October 12, 2021
Author(s)
F S. Aguirre-Tostado, A Herrera-Gomez, Joseph Woicik, R Droopad, Z Yu, D G. Schlom, E Karapetrova, P Pianetta, C S. Hellberg
The driving force of the semiconductor industry to integrate thin transition-metal oxides with Si transistor technology has led to the development of SrTiO3 thin-film growth on Si(001). As SrTiO3 represents a large class of oxides with the perovskite

Layer Perfection in Ultrathin, MOVPE-Grown InAs Layers Buried in GaAs(001) Studied by X-Ray Standing Wave and Photoluminescence Spectroscopy

October 12, 2021
Author(s)
J A. Gupta, Joseph Woicik, S P. Watkins, D A. Harrison, E D. Crozier, B A. Karlin
Using the In-L fluorescence produced by normal-incidence X-ray standing waves, we have measured the layer perfection and positions for ML = 1 and 1/2 (where ML = # of mono layers) InAs quantum wells buried in GaAs(001). Growth temperature effects were

Low Temperature Compaction of Nanosize Powders

October 12, 2021
Author(s)
E J. Gonzalez, Gasper J. Piermarini
In recent years there has been a strong interest in the processing of nanosize ceramic powders because of the potential of sintering them at low temperatures and also because ceramic pieces made of nanosize gram structures may exhibit superior mechanical

Nano/Bioscience and Technology Education for the 21st Century

October 12, 2021
Author(s)
J Jacobs, Winnie Wong-Ng, Gale A. Holmes, Richard F. Kayser
NEW:Update 2005, the 20th annual workshops for science and technology educators with the theme, NANO/BIOSCIENCE AND TECHNOLOGY EDUCATION FOR THE 21ST CENTURY, was hosted by the National Institute of Standards and Technology/Materials Science and

Near-Field Intensity Correlations in Semicontinuous Metal-Dielectric Films

October 12, 2021
Author(s)
K Seal, A K. Sarychev, H Noh, D A. Genov, A Yamilov, Vladimir Shalaev, Z C. Ying, H Cao
Spatial intensity correlation functions are obtained from near-field scanning optical microscope measurements of semicontinuous metal-dielectric films. The concentration of metal particles on a dielectric surface is varied over a wide range to control the

NEXAFS Characterization of Poly(amino acids)

October 12, 2021
Author(s)
N T. Samuel, Daniel A. Fischer, David G. Castner
The near-edge x-ray absorption fine structure (NEXAFS) spectra of poly(amino acids) at the carbon, nitrogen and oxygen k-edges are investigated in this study. The poly(amino acid) NEXAFS spectra at the k-edges closely resemble the spectra of the

NiO: A Charge Transfer or Mott-Hubbard Insulator

October 12, 2021
Author(s)
T M. Schuler, D L. Ederer, S Itza-Ortiz, G T. Woods, T A. Callcott, Joseph Woicik
Using site-specific soft x-ray emission and absoroption spectroscopy in conjunction with site-specific x-ray photoelectron spectroscopy, we measure the magnitude of the insulating band gap of NiO to be approximately 2.0 eV, comparable to that predicted by

Processing of High Temperature Ceramic Superconductors

October 12, 2021
Author(s)
P Goyal, Winnie Wong-Ng, Y Murakami, D Driscoll
The contents of this transaction volume comprise the proceedings of the Electronics Division Focused Session HighTemperature Superconductor Processing during the American Ceramic Society annual meeting at St. Louis, MO, from April29 to May 1, 2002.. A

Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films

October 12, 2021
Author(s)
M A. Sahiner, Joseph Woicik, P Gao, P McKeown, Mark Croft, M Gartman, B Benapfl
The continuous downward scaling of the complementary metal oxide semiconductor (CMOS) devices has enabled the Si-based semiconductor industry to meet the technological requirements such as high performance and low power consumption. However, the

Quantitative Evaluation of Perfluorinated Alkylthiol Molecular Order on Gold Surfaces

October 12, 2021
Author(s)
L Gamble, D Radford, Daniel A. Fischer, D W. Grainger, David G. Castner
Self-assembled monolayers (SAMs) of perfluoroalkylthiols [CF3(CF2)xCH2CH2SH (x=3, 5, 7, and 9)] on gold were examined by X-ray photoelectron spectroscopy (XPS), near edge X-ray absorption fine structure (NEXAFS), and static time of flight secondary ion

Resistance Heating of the Gasket in a Gem-Anvil High Pressure Cell

October 12, 2021
Author(s)
N M. Balzaretti, E J. Gonzalez, Gasper J. Piermarini, T Russell
The design and fabrication of a modified gem-anvil high pressure cell capable of statically heating gasketed samples to temperatures in the range of 1100 degrees C at pressures up to 4.0 Gpa is described. The high temperatures were achieved by resistance

Secondary Phase Evolution in Silicon Nitride During Creep and Heat Treatment

October 12, 2021
Author(s)
F Lofaj, H Gu, A Okada, Sheldon M. Wiederhorn, H Kawamoto
The microstructure of a ytterbia- and yttria-containing grade of silicon nitride, SN 88, was investigated after it had been annealed in nitrogen, in air and crept in air. We were particularly interested in phase transformation within the secondary silicate
Displaying 26 - 50 of 1280